Articles you may be interested inDepletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics Appl. Phys. Lett. 103, 123511 (2013); 10.1063/1.4821858 GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al 2 O 3 as gate dielectric Appl. Phys. Lett. 86, 063501 (2005); 10.1063/1.1861122 Delta-doped AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with high breakdown voltages Appl.We report the initial demonstration of an enhancement mode MgO/p-GaN metal-oxide-semiconductor field-effect transistor ͑MOSFET͒ utilizing Si ϩ ion-implanted regions under the source and drain to provide a source of minority carriers for inversion. The breakdown voltage for an 80-nm-thick MgO gate dielectric was ϳ14 V, corresponding to a breakdown field strength of 1.75 MV cm Ϫ1 and the p-n junction formed between the p-epi and the source had a reverse breakdown voltage Ͼ15 V. Inversion of the channel was achieved for gate voltages above 6 V. The maximum transconductance was 5.4 S mm Ϫ1 at a drain-source voltage of 5 V, comparable to the initial values reported for GaAs MOSFETs.

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The electrical properties of GaN metal–insulator–semiconductor (MIS) capacitors with as-grown SiO2, annealed SiO2, and SiN x insulators were investigated by capacitance–voltage (C–V), current–voltage (I–V), and time-dependent dielectric breakdown (TDDB) measurements. The MIS capacitor with the SiN x insulator was determined to have a lower interface trap density of 1×1011 cm-2 eV-1 than the MIS capacitors with the as-grown and annealed SiO2 insulators. In addition, the dielectric lifetime of the SiN x insulator was extrapolated to be more than 20 years at an even high voltage at room temperature. These results indicate that the high insulator/GaN interface quality and high reliability required for high-performance power devices can be achieved by the deposition of the SiN x insulator on GaN.

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