Design concept for wire-bonding reliability improvement by optimizing position in power devices

Ishiko, M.; Usui, Masanori; Ohuchi, Tomohiro; Shirai, Mikio

doi:10.1016/j.mejo.2005.09.015

Cited by 58 publications

(23 citation statements)

References 5 publications

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“…For these connection elements, optimizing their position [13], materials or welding techniques [14] are key factors to improve the performance of an assembly.…”

Section: Thermal Losses In Wire Bondingmentioning

confidence: 99%

Characterization of an integrated buck converter using infrared thermography

Viviès¹,

Haussener²,

Welemane³

et al. 2014

Proceedings of the 2014 International Conference on Quantitative InfraRed Thermography

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This study deals with new integrated systems for power electronics applications including wide-gap semiconductors. Integration of Silicon carbide (SiC) components provides for instance new perspectives with higher temperature operating points than conventional Silicon (Si) semiconductors. The present work intends to study an integrated buck converter composed of a Silicon IGBT (Insulated-Gate Bipolar Transistor) and a Silicon carbide diode. By means of infrared thermography, an analysis of the thermal disparities induced within such a hybrid assembly under various electrical loads is proposed, regarding especially the consequences of the electrical power transfer and the spatial distribution of the thermal field.

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“…For these connection elements, optimizing their position [13], materials or welding techniques [14] are key factors to improve the performance of an assembly.…”

Section: Thermal Losses In Wire Bondingmentioning

confidence: 99%

Characterization of an integrated buck converter using infrared thermography

Viviès¹,

Haussener²,

Welemane³

et al. 2014

Proceedings of the 2014 International Conference on Quantitative InfraRed Thermography

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“…Failure behaviors, e.g., heel cracking, fractures, wire lift-off and metallurgical damage of metal wire and IGBT chip, are detected during the reliability test [2][3][4]. Previous studies have analyzed the arrangement position of wire, based on electro-thermal simulation, to predict the temperature distribution; the maximum junction temperature is reduced as well [5].…”

Section: Introductionmentioning

confidence: 99%

Study on configuration design of interconnection in high power module

Liao

Hung

Liu

et al. 2014

2014 15th International Conference on Thermal, Mechanical and Mulit-Physics Simulation and Experiments in Microelectronics and

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In a high power module, a high electrical load may cause electromigration and induce the joule heating, subsequently raising the chip temperature. Temperature excursion in the IGBT chip may produce thermal stress, inducing failure in the metal wire and chip. Those failure modes degrade the reliability of a power module. This study elucidates the coupling behavior of a high power module through electro-thermal coupling analysis and thermo-mechanical analysis.Additionally, the configuration design of an aluminum wire is simulated and implemented. Related design parameters, e.g., wire arrangement position, wire number, wire bonding perimeter and wire height, are studied and the design trend of a metal wire is analysed and suggested as well.

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“…In evaluating the fatigue of a power device, the thermal distribution is closely related to the fatigue life. The thermal distribution at the solder junction and in the power device is computed using a combination of electrical and heat analysis [4,5]. The fatigue life cycle has also been predicted using thermal stress analysis [6][7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Evaluation of Fatigue Life of Semiconductor Power Device by Power Cycle Test and Thermal Cycle Test Using Finite Element Analysis

Shinohara¹,

Yu²

2010

ENG

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To accurately predict the fatigue life of a power device, a fatigue life evaluation method that is based on the power cycle is presented in terms of an algorithm based on a combination of electrical analysis, heat analysis, and stress analysis. In literature, the fatigue life of power devices has been evaluated on the basis of the thermal cycle. This cycle is alternately repeated within a range from a high temperature to a low temperature. In an actual operating environment, however, a power device works in a power cycle that consists of being switched ON and OFF. To accurately predict the fatigue life cycle of a device, then, the evaluation should take account of this important aspect of the power cycle. To verify the utility of the evaluation method presented in this study, the results for a power cycle based on the combined use of electrical analysis, heat analysis, and stress analysis are compared to the results based on the thermal cycle, as found in the literature. Our conclusion is that the fatigue life cycle as estimated by the thermal cycle test is higher than that estimated by the power cycle

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Design concept for wire-bonding reliability improvement by optimizing position in power devices

Cited by 58 publications

References 5 publications

Characterization of an integrated buck converter using infrared thermography

Characterization of an integrated buck converter using infrared thermography

Study on configuration design of interconnection in high power module

Evaluation of Fatigue Life of Semiconductor Power Device by Power Cycle Test and Thermal Cycle Test Using Finite Element Analysis

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