In this study, we grew Cu co-doped single crystals of a topological superconductor candidate SrxBi2Se3, and studied their structural and transport properties. We reveal that the addition of even as small an amount of Cu co-dopant as 0.6 atomic %, completely suppresses superconductivity in SrxBi2Se3. Critical temperature (∼2.7 K) is rather robust with respect to co-doping. We show that Cu systematically increases the electron density and lattice parameters a and c. Our results demonstrate that superconductivity in SrxBi2Se3-based materials is induced by significantly lower Sr doping level x<0.02 than commonly accepted x∼0.06, and it strongly depends on the specific arrangement of Sr atoms in the host matrix. The critical temperature in superconductive Sr-doped Bi2Se3 is shown to be insensitive to carrier density.

We show that the terahertz (tHz) photoconductivity in the topological phase of Hg 1-x cd x te-based structures exhibits the apparent PT-(parity-time) symmetry whereas the P-symmetry and the Tsymmetry, separately, are not conserved. Moreover, it is demonstrated that the P-and T-symmetry breaking may not be related to any type of the sample anisotropy. this result contradicts the apparent symmetry arguments and means that there exists an external factor that interacts with the sample electronic system and breaks the symmetry. We show that deviations from the ideal experimental geometry may not be such a factor. Scientific RepoRtS |

We report on observation of strong non-local photoconducitivity induced by terahertz laser pulses in non-zero magnetic field in heterostructures based on Hg1−xCdxTe films being in the topological phase. While the zero-field non-local photoconductivity is negligible, it is strongly enhanced in magnetic fields ~ 0.05 T resulting in appearance of an edge photocurrent that exceeds the respective dark signal by orders of magnitude. This photocurrent is chiral, and the chirality changes every time the magnetic field or the electric bias is reversed. Appearance of the non-local terahertz photoconductivity is attributed to features of the interface between the topological film and the trivial buffer.

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We report a detailed study of the bipolar persistent photoconductivity in an HgTe/CdHgTe double quantum well (DQW), which can be a perspective for studying topological states in these structures. Photoconductivity spectra measurements in the range of 1.1–3.1 eV as well as transport measurements under different illumination conditions were performed at T = 4.2 K. Based on the results, the processes occurring in the structure under illumination and leading to a change in the carrier concentration in the DQW have been established. They include interband generation in the CdTe cap layer and in the CdHgTe barrier layer and electron transitions from the spin-split band in the CdHgTe barrier layer to the conduction band in the CdTe cap layer. The presence of the CdTe cap layer and the appropriate cadmium fraction in the CdHgTe barrier layers have been shown to be the main factors determining the key features of the spectra. Finally, we suggest an effective method of controlling the conductivity type of HgTe/CdHgTe structures using light with different wavelengths.

In this paper, we report on photoconductivity induced by high-power laser radiation with a frequency of 2 THz in Hg0.87Cd0.13Te-based epitaxial structures. Experimental results obtained for a set of the samples with variable geometric parameters allow us to determine the photoresponse features of both bulk and nonlocal contributions to the net response. We show that the persistent photoconductivity effect originates from the non-equilibrium processes related to the bulk carrier excitation.