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Low (keV) and high (MeV) energy Al and B implants were performed into n-type 6H- and 3C-SiC at both room temperature and 850 °C. The material was annealed at 1100, 1200, or 1400 °C for 10 min and characterized by secondary ion mass spectrometry, Rutherford backscattering (RBS), photoluminescence, Hall and capacitance-voltage measurement techniques. For both Al and B implants, the implant species was gettered at 0.7 Rp (where Rp is the projected range) in samples implanted at 850 °C and annealed at 1400 °C. In the samples that were amorphized by the room temperature implantation, a distinct damage peak remained in the RBS spectrum even after 1400 °C annealing. For the samples implanted at 850 °C, which were not amorphized, the damage peak disappeared after 1400 °C annealing. P-type conduction is observed only in samples implanted by Al at 850 °C and annealed at 1400 °C in Ar, with 1% dopant electrical activation.

The present status of SiC high-voltage power switching devices is reviewed. The figures of merits that have been used for unipolar and bipolar devices to quantify the intrinsic performance improvement over silicon are presented. Analytical and numerical modeling and simulations to estimate the BV and device choice are described. The active area and termination design of trenched-gate MOS power transistors, together with an integrated process for their fabrication, is presented. The progress in high-voltage power device experimental demonstration is described. The material and process technology issues that need to be addressed for SiC device commercialization are discussed. Finally, the impact of SiC power devices on motor drive systems is estimated.

TEOS stands for tetraethoxysilane (C~IsO)~Si. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.184.220.23 Downloaded on 2015-03-15 to IP Vol. I18, No. 9 DEPOSITION OF ARSENOSILICATE GLASS ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.184.220.23 Downloaded on 2015-03-15 to IP