Silicon carbide UV photodiodes

Brown, D.M.; Downey, E.; Ghezzo, M.; Kretchmer, J.; Saia, R.; Liu, Y.S.; Edmond, J. A.; Gati, G.; Pimbley, Joseph M.; Schneider, William E.

doi:10.1109/16.182509

Cited by 158 publications

(45 citation statements)

References 5 publications

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“…A peak responsivity of 144 mA/W at 265-nm wavelength, corresponding to an external quantum efficiency of about 67%, is achieved for the diodes. Although the unity gain spectral responsivity curves measured are similar to those of 6H-SiC diodes reported by Brown et al [4], these 4H-SiC APDs do not exhibit photo-response for wavelengths longer than 380 nm (see inset of Fig. 2) because of their wider bandgap.…”

mentioning

confidence: 48%

Multiplication and excess noise characteristics of thin 4H-SiC UV avalanche photodiodes

Yan

David

et al. 2002

IEEE Photon. Technol. Lett.

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mentioning

confidence: 48%

Multiplication and excess noise characteristics of thin 4H-SiC UV avalanche photodiodes

Yan

David

et al. 2002

IEEE Photon. Technol. Lett.

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“…2, the responsivity curves calculated using these parameters are in good agreement with the measurements. The minority carrier diffusion lengths deduced for 4H-SiC are found to be broadly similar to those of 6H-SiC [15], [16].…”

Section: A Quantum Efficiencymentioning

confidence: 90%

Nonlocal effects in thin 4H-SiC UV avalanche photodiodes

David

Tozer

et al. 2003

IEEE Trans. Electron Devices

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ReuseUnless indicated otherwise, fulltext items are protected by copyright with all rights reserved. The copyright exception in section 29 of the Copyright, Designs and Patents Act 1988 allows the making of a single copy solely for the purpose of non-commercial research or private study within the limits of fair dealing. The publisher or other rights-holder may allow further reproduction and re-use of this version -refer to the White Rose Research Online record for this item. Where records identify the publisher as the copyright holder, users can verify any specific terms of use on the publisher's website. TakedownIf you consider content in White Rose Research Online to be in breach of UK law, please notify us by emailing eprints@whiterose.ac.uk including the URL of the record and the reason for the withdrawal request. ) for hole (electron) injection, was measured with 365-nm light in both structures. Modeling the experimental results using a simple quantum efficiency model and a nonlocal description yields effective ionization threshold energies of 12 and 8 eV for electrons and holes, respectively, and suggests that the dead space in 4H-SiC is soft. Although dead space is important, pure hole injection is still required to ensure low excess noise in thin 4H-SiC APDs owing to ratios that remain large, even at very high fields.

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“…Other novel approaches include the use of organics and phosphors. Silicon-based detection utilizes silicon carbide materials [3] and amorphous silicon alloys [1,2].…”

Section: Introductionmentioning

confidence: 99%

“…Another approach consists in using conducting polymer-siliconbased devices which offer an opportunity for the development of silicon-based integrated technology [3,[4][5][6][7][8][9][10][11]. Recently we report the development and application of high quality heterojunctions consisting of silicon and the conducting polymer polyaniline.…”

Section: Introductionmentioning

confidence: 99%