Deuterium diffusion profiles in GaAs doped with different acceptors of group II (Mg,Zn,Cd) or group IV (C,Ge) have similar characteristics even though the neutralization of acceptors measured at 300 K is not always efficient. Conductivity and Hall measurements have been used to study the electrical characteristics of hydrogenated p-type GaAs epilayers. The temperature dependence of the free-carrier concentration and hole mobility before and after hydrogenation shows that the neutralization of acceptors by atomic hydrogen leads to the elimination of the shallow acceptor states. Infrared-absorption lines associated with hydrogen-acceptor complexes are observed for all acceptors except magnesium. It is established that the microscopic structure of hydrogen-acceptor complexes depends on the acceptor site in the lattice.
Ion irradiation damage in ntype GaAs in comparison with its electron irradiation damageDeep level centers produced by I-MeV electron irradiation at room temperature onp-type GaAs (liquid-and vapor-phase epitaxial layers) have been studied by means of Deep Level Transient Spectroscopy and Deep Level Optical Spectroscopy. Activation energies, thermal and optical photo ionization cross sections, and introduction rates have been measured for the main defects. The trap HI is shown to have an introduciton rate (0.25 cm -I) different from that of the E3 center created in n-type GaAs. As previously reported HI is found to be highly relaxed from the Franck-Condon shift parameter given by optical spectroscopy. New hole traps created with an introduction rate greater than 2 cm -I have been detected for the first time by low-temperature transient spectroscopy measurements.
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