Electron irradiation effects in <i>p</i>-type GaAs

Loualiche, Slimane; Nouailhat, A.; Guillot, G.; Gavand, M.; Laugier, A.; Bourgoin, J. C.

doi:10.1063/1.330467

Cited by 34 publications

(3 citation statements)

References 14 publications

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“…The absorption band centered at 1.3µm covers the range of interest and grows linearly with the irradiation dose (Fig.5). We attribute this absorption band to the photoemission of holes from the H3 defect, the photoionization cross-section spectrum of which has been determined by Deep Level Optical Spectroscopy experiments in p-type crystals [20]. This spectrum, presented in Figure 6, corresponds exactly to the absorption spectra we measure (Fig.4).…”

Section: B Absorptionsupporting

confidence: 72%

Photorefractive measurements on electron-irradiated semi-insulating GaAs

Delaye

Bardeleben²,

Roosen

1994

Appl. Phys. A

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We present photorefractive measurements at 1.06µm and 1.3µm performed in electron irradiated GaAs. Irradiation with electrons of kinetic energies ≥ 1MeV introduces intrinsic electrically active defects, which modify the Fermi level position and allow to modify the electron hole competition mechanism of the photorefractive effect. Further, it has been shown that the optical absorption in the 1.3 to 1.5 µm spectral range can be increased, which might allow to enlarge the useful spectral range of GaAs towards optical telecommunication windows. The native and irradiation induced defects have been assessed by electron paramagnetic resonance and optical absorption spectroscopy conducted at T=300K and 77K. The direct influence of an irradiation induced mid-gap defect on the photorefractive effect is experimentally and theoretically demonstrated .

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Section: B Absorptionsupporting

confidence: 72%

Photorefractive measurements on electron-irradiated semi-insulating GaAs

Delaye

Bardeleben²,

Roosen

1994

Appl. Phys. A

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“…The defect lines found in the dot samples have activation energies and capture cross sections from an Arrhenius analysis that are similar to those reported in the literature. [23][24][25][26] The nature of these is still a topic of discussion, as they are also associated with native defects such as vacancies, interstitials, antisites, and in some cases with impurities such as Cu and Fe. Because the SK growth mode involves the strain-induced movement of GaSb to form quantum dots it is likely that stoichiometric defects will be left in the GaAs near the dots in small quantities measurable in a DLTS experiment.…”

Section: Discussionmentioning

confidence: 99%

Deep level transient capacitance measurements of GaSb self-assembled quantum dots

Magno¹,

Bennett²,

Glaser³

2000

Journal of Applied Physics

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Deep level transient spectroscopy ͑DLTS͒ measurements have been made on GaAs n ϩ p diodes containing GaSb self-assembled quantum dots and control junctions without dots. The self-assembled dots were formed by molecular beam epitaxy using the Stranski-Krastanov growth mode. The dots are located in the depletion region on the p side of the junction where they act as a potential well that may capture and emit holes. Spectra recorded for temperatures between 77 and 440 K reveal several peaks in diodes containing dots. A control sample with a GaSb wetting layer was found to contain a single broad high temperature peak that is similar to a line found in the GaSb quantum dot samples. No lines were found in the spectra of a control sample prepared without GaSb. DLTS profiling procedures indicate that one of the peaks is due to a quantum-confined energy level associated with the GaSb dots while the others are due to defects in the GaAs around the dots. The peak identified as a quantum-confined energy level shifts to higher temperatures and its intensity decreases on increasing the reverse bias. The activation energy for the quantum-confined level increases from 400 meV when measured at a low reverse bias to 550 meV for a large reverse bias. Lines with activation energies of 400, 640, and 840 meV are associated with defects in the GaAs based on the bias dependence of their peak positions and amplitudes.

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“…First, we consider the hole trap C. Table 2 lists the summary of the trap energy and hole capture crosssection. Loualiche et al [27] reported irradiation-induced hole traps in p-type GaAs by a systematic study of the effect of 1 MeV electron irradiation at room temperature and detected a defect with the same activation energy (0.2 eV) as the C defect. Auret et al [28] reported on the electrical properties of hole traps created during irradiation of p-GaAs grown by molecular beam epitaxy (MBE).…”

Section: Discussion and Summarymentioning

confidence: 99%

Sputter-induced defects in Zn-doped GaAs Schottky diodes

Arakaki¹,

Ohashi²,

Sudou³

2003

Semicond. Sci. Technol.

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Schottky barrier diodes are made by ac magnetron deposition of Au on p-type GaAs substrates. Sputtering causes donor-like defects in the surface region of semiconductors, and these donor-like states compensate mostly the Zn shallow acceptor states over distances of 200 nm below the surface. These defects are attributed to the As Frenkel pairs V As -As i with an energy level at 0.27 eV below the conduction band. The As Frenkel pairs are responsible for the Fermi level pinning at metal-semiconductor interfaces and also for the observed change in barrier height in sputtered GaAs material.

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Electron irradiation effects in p-type GaAs

Cited by 34 publications

References 14 publications

Photorefractive measurements on electron-irradiated semi-insulating GaAs

Photorefractive measurements on electron-irradiated semi-insulating GaAs

Deep level transient capacitance measurements of GaSb self-assembled quantum dots

Sputter-induced defects in Zn-doped GaAs Schottky diodes

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