We report on nickel based technology for the fabrication of GaN mesa structures. Ti/Ni ohmic contacts for n-doped GaN with contact resistivity R c ~2×10 -5 Ω ×cm 2 and Ni ohmic contacts for p-doped GaN with R c ~ 4×10 -2 Ω ×cm 2 were formed. Both types of contacts were used as masks for GaN reactive ion etching (RIE) in a CCl 2 F 2 /Ar gas mixture. Maximum etch rates of ~ 40 nm/min were obtained. Mesa structures up to 3 µm in height were formed.
This work compares our experimental data on surface barrier height in structures metal–n-6H–SiC for several metals (Al, Au, Mo, Cr) with other data available and with classical models of surface barrier formation. We observed decreasing of barrier height with increasing of donors concentration for the structures Au–n-6H–SiC, Mo–n-6H–SiC and Al–n-6H–SiC. We estimate the average surface energy level for (0001)-Si-faced n-6H–SiC, appearing in capacitance–voltage (C–V) measurements, to be about 0.3Eg at room temperature (Eg is the energy band gap) and corresponding surface states density to be about 1013 cm−2 eV−1, based both on our data and data of other authors.
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