CoWP metal caps have been integrated into 65nm-and 45nm-node copper interconnects. A number of CoWP specific integration aspects have been investigated. Electrical performance, reliability and yield potential were characterized on a statistical base. Substantial progress has been made to suppress the CoWP related time-depended dielectric breakdown (TDDB) degradation making CoWP the option to solve the electromigration (EM) challenge for 32nm and beyond.
In this study Ru-Mn alloys are discussed in terms of some of the major questions that are typically associated with the development of new types of barriers. First, the Cu diffusion barrier performance after annealing at high temperatures and under subsequent bias temperature stress is investigated, on SiO2 and on low-k dielectrics. Second, the origin of the barrier performance - either a self forming barrier caused by segregation of an alloyed element, or the stuffing of grain boundaries - is investigated, since this is of importance with regard to an electromigration barrier at the bottom of a via. Third, Cu plating and Cu adhesion behavior are addressed, since they are also important with regard to electromigration, specifically along the side walls of trenches. Fourth, the blocking of oxygen diffusion is investigated. Furthermore, down-scaling of the Mn content to a lowest possible level is pursued in order to reduce line and via resistances
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.