Simulation of TaN  deposition by Reactive PVD

Wolf, Heinrich; Streiter, R.; Friedemann, M.; Bělský, Petr; Bakaeva, O.; Letz, T.; Geßner, Thomas

doi:10.1016/j.mee.2009.11.044

Cited by 7 publications

(7 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Thus, the deposition process can be limited by mass transfer for N 2 /Ar ratio values higher than 0.8. This behavior is similar to results obtained in literature (5,8,(10)(11)(12)(13). Furthermore, the reduced sputtering efficiency of the nitrogen-rich atmosphere can be expected (13), which reduces the DR values; ii)…”

Section: Resultssupporting

confidence: 90%

See 1 more Smart Citation

Tantalum Nitride as Promising Gate Electrode for MOS Technology

et al. 2010

View full text Add to dashboard Cite

Tantalum nitride (TaN) films have been obtained by DC sputtering deposition, using different nitrogen flow and discharge power on Si substrates. The N2/Ar ratio and sputtering power effects on structural and electrical properties of TaN films were investigated by scan profiler (film thickness and deposition rate), atomic force microscopy (rms roughness and grain size) and four-probe technique (electrical resistivity). The deposition rates, between 4 and 78 nm/min, decreased with an increase of N2/Ar ratio, and electrical resistivities, between 150 and 7500 μΩ.cm, increased. For the best condition for N2/Ar of 0.33 and discharge power of 1000W, low electrical resistivity of 350 μΩ.cm, the rms roughness of 0.8 nm and grain size of 380 nm2 were obtained. This best film has been used as gate electrodes in MOS capacitors, which were fabricated with SiNxOy as gate dielectric. These capacitors were used to obtain capacitance-voltage (C-V) measurements. The flat-band voltage of -1.34 V and effective charge densities of about 1011 cm-2 were extracted from all C-V curves, indicating that the TaN/SiNxOy/Si structures present similar behavior when are compared to those presented in literature. Therefore, our TaN gate electrode can be considered as promising gate electrode for CMOS technology.

show abstract

Section: Resultssupporting

confidence: 90%

“…It is important to notice that for N 2 /Ar ratio of 0.66 and discharge power of 1500 W, the lowest electrical resistivity of 150 μΩ.cm was obtained. The minimum values of 175 μΩ.cm and 150 μΩ.cm can indicate the Ta film formation (13).…”

Section: Resultsmentioning

confidence: 99%

Tantalum Nitride as Promising Gate Electrode for MOS Technology

et al. 2010

View full text Add to dashboard Cite

show abstract

“…The layer is typically deposited by physical vapor deposition (PVD), which can result in a poor sidewall coverage and elemental composition differences over the trench. 1,2 The nitrogen content in TaN thin films affects the diffusion barrier performance and the sheet resistance of the thin film, which has a noticeable impact on the RC delay. 3,4 Furthermore, it influences the crystallinity of the Ta layer deposited on top of it.…”

Section: Introductionmentioning

confidence: 99%

“…Current industry standard uses a tantalum nitride (TaN)/tantalum (Ta) bilayer as barrier layer. The layer is typically deposited by physical vapor deposition (PVD), which can result in a poor sidewall coverage and elemental composition differences over the trench 1,2 . The nitrogen content in TaN thin films affects the diffusion barrier performance and the sheet resistance of the thin film, which has a noticeable impact on the RC delay 3,4 .…”

Section: Introductionmentioning

confidence: 99%

Analysis of the composition of tantalum nitride in CMOS metallization trenches using parallel angle‐resolved XPS

Wehring

Gerlich

Kia

et al. 2020

Surface & Interface Analysis

View full text Add to dashboard Cite

We demonstrate the utilization of parallel angle-resolved X-ray photoelectron spectroscopy (pAR-XPS) as a useful tool to analyze ultrathin sputtered tantalum nitride (TaN) thin films in complementary metal-oxide-semiconductor (CMOS) trenches. The chemical composition of TaN was estimated by pAR-XPS using a Theta 300i from Thermo Fischer. An improved lateral resolution was achieved by analyzing periodic structures. The XPS data was correlated with transmission electron microscopy (TEM) in combination with energy-dispersive X-ray spectroscopy (EDX) and time-offlight secondary ion mass spectrometry (ToF-SIMS) data. The results show that the nitrogen content in the TaN thin films was about 6% higher at the sidewall compared with the top and bottom of the trench.

show abstract

“…In order to characterize and understand the reactive PVD deposition process, a combination of a numerical computer simulation of deposition and transport processes with mass spectrometry and deposition rate measurements (using microbalance and profilometer) have been applied in [12][13][14]. At that measured target, the current density was used for the characterization of ion flux by sputtering simulation.…”

Section: Introductionmentioning

confidence: 99%

Characterization of DC magnetron plasma in Ar/Kr/N₂mixture during deposition of (Cr,Al)N coating

Bobzin

Bagcivan

Theiß

et al. 2017

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Reactive sputter deposition of (Cr,Al)N coatings in DC magnetron plasmas containing Ar/Kr/N2 mixtures is characterized by applying a combination of voltage–current measurement, optical emission spectroscopy (OES) and numerical simulation. Theoretical and experimental methods supplement each other and their combination permits us to obtain the most reliable information about the processes by physical vapor deposition. Gas temperature (Tg) and plasma parameters, namely electron density ne and electron temperature Te are determined by spatial resolved measurements of molecular nitrogen photoemission. Steady-state densities of Cr and Al atoms are measured using OES. The sputtering of Cr and Al atoms is simulated using the TRIDYN code, measured electric current and applied voltage. Transport of sputtered atoms through the plasma volume is simulated by adopting a Monte-Carlo code. In order to quantify the ‘poisoning’ of the target surface with nitrogen, simulated steady state densities of Al and Cr atoms at different states of poisoning and at different distances from the target are compared with the measured densities. In addition, simulated fluxes of Cr and Al atoms to the substrate are compared with the measured deposition rates of the (Cr,Al)N coating.

show abstract

Simulation of TaN deposition by Reactive PVD

Cited by 7 publications

References 30 publications

Tantalum Nitride as Promising Gate Electrode for MOS Technology

Tantalum Nitride as Promising Gate Electrode for MOS Technology

Analysis of the composition of tantalum nitride in CMOS metallization trenches using parallel angle‐resolved XPS

Characterization of DC magnetron plasma in Ar/Kr/N₂mixture during deposition of (Cr,Al)N coating

Contact Info

Product

Resources

About

Simulation of TaN deposition by Reactive PVD

Cited by 7 publications

References 30 publications

Tantalum Nitride as Promising Gate Electrode for MOS Technology

Tantalum Nitride as Promising Gate Electrode for MOS Technology

Analysis of the composition of tantalum nitride in CMOS metallization trenches using parallel angle‐resolved XPS

Characterization of DC magnetron plasma in Ar/Kr/N2mixture during deposition of (Cr,Al)N coating

Contact Info

Product

Resources

About

Characterization of DC magnetron plasma in Ar/Kr/N₂mixture during deposition of (Cr,Al)N coating