Printed Wiring Board (PWB)-based MEMS RF switches were developed using modified processes and similar materials as used for High Density Interconnect/Embedded Passives (HDI/EP) components. By constructing cantilever-beam electrostatic mechanisms, single-pole single throw through single-pole four-throw RF switches were developed with suitable performance in the microwave band. Combining these switches with embedded lumped element filter components using the same substrate materials, a switched filter bank was simulated, fabricated, and measured results shown.
This paper describes the use of the EE‐1 process for making high‐reliability multilayer boards. The EE‐1 process eliminates the need for flash electroless copper for plated‐through holes. With this process, copper is directly electrodeposited onto an activated through‐hole. In addition to eliminating electroless deposition, the EE‐1 process claims to simplify process control, provide excellent copper‐to‐copper adhesion, and total backlight PTH coverage. Production experience with the process is extensive as it has been used at Photocircuits, Atlanta, since January 1986 in the fabrication of double‐sided boards. Test data of joint reliability and physical properties of copper in PTHs of multilayer boards obtained through this unique approach are presented. A special test, which directly measures the bond strength between through‐hole deposited copper and inner foil of multilayers, is also discussed.
PurposeThe purpose of this paper is to present a new class of printed circuit board (PCB)‐based, radio frequency micro‐electro‐mechanical systems (RF‐MEMS) switches and to describe the packaging method and evaluate performance.Design/methodology/approachTraditional PCB materials and processes were combined with photolithographic high‐density interconnect (HDI) and MEMS to form 3D high‐performance RF switches.FindingsA new type of MEMS RF switch has been developed on a PCB platform. Using processes analogous to those used for silicon MEMS, PCB, and HDI technologies were utilized to fabricate these 3D structures. The PCB‐based microstructures are “mil‐scale” rather than the “micro‐scale” of silicon MEMs. A co‐fabrication packaging method for the MEMS RF switch was also developed. The PCB‐based MEMS switches have demonstrated excellent RF performance and “hot‐switching” RF power‐handling capability. PCB‐based MEMS RF switches have the advantages of low cost and amenability to scale‐up for a high degree of integration.Research limitations/implicationsFurther development on photo imageable dielectric materials will enable this technology to improve yield and processability.Originality/valueThe paper describes the development of PCB‐based MEMS RF switches. These elements will enable new applications and enhance the functionality of PCBs. They are also more amenable to system integration compared with silicon MEMS.
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