For faster, smaller, and higher performance integrated circuits, a low dielectric constant insulator is required to replace silicon dioxide. Here the properties of a new dielectric—SiLK resin, a solution of a low‐molecular‐weight aromatic thermosetting polymer—are reviewed and examples of its application in the fabrication of interconnect structures, such as the one shown in the Figure, are given.

The results of a series of novel synchrontron‐based in situ x‐ray scattering experiments of monofilament fiber drawing from lyotropic solutions of poly(cis‐benzoxazole) (PBO) and poly(trans‐benzothiazole) (PBZT) are reported. The purpose of the study is to determine orientation and microstructure development in the draw zone as a function of shear rate in the capillary die, and spin draw ratio (SDR). The transition of the extrudate from opaque to the transparent is complete at about a SDR = 3 and f of 0.9. The filament orientation parameter (f) was found to depend strongly on spin draw ratio, but not shear rate. The orientation was found to increase down the extrudate toward completion of the draw down as one proceeds further from the die face up to an extrudate length of 3.8 cm. Coherence lengths on the order of 19 nm (axial), and 4.5 nm (lateral) have been observed. These “microdomain” sizes are consistent with the “crystallite” sizes typically observed in coagulated fiber. The occurrence of these microdomains in the draw zone as a precursor to the microfibrillar structure is believed to be the origin of low filament compressive strength. © 1994 John Wiley & Sons, Inc.

Adherence to the prescript of Moore's law continues to drive materials development for new and lower dielectric constant materials for use as back-end-of-line (BEOL) interlayer dielectric in advanced logic IC's. As is the case for the current generation of low-K materials (<3.0), these ultra-low K materials (<2.2) will need to meet the variety of integration and reliability requirements for successful product development. Excluding the incorporation of fluorine to lower the material polarity, further reductions of dielectric constant can only be achieved by reduced density. Based upon the industry's experience with the current class of full density dielectrics, process integration may be challenging for ultra-low K materials. This anticipated difficulty derives from the profound differences in material properties, e.g. mechanical integrity, as one lowers the material density, which in turn confounds existing manufacturing processes that have evolved over 35 years based on silicon dioxide.Minimizing these material and processing differences by extending leveraged learning from previous technology nodes is essential for timely and cost-efficient development cycles. As a result, material selection of a full density low-K is somewhat influenced by the ability of that material to be extended into future generations. Understanding how the material properties will change as its density is lowered is vital to this selection process. In this paper, we present a summary of models for calculating effective properties as a function of density and apply these to current low-K materials with emphasis on mechanical integrity. We will also review experimental methods for measuring the mechanical integrity of ultra-low K materials and compare the results to the various models described herein.

Three low dielectric constant organic polymers are being investigated for possible use in a conventional, subtractive etch, multi-level metal process with PVD Al plugs. Material properties, physical properties, planarization ability and etch chemistries are compared, as well as the possibility of using these materials in a low temperature PVD A1 plug process.

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