A mode1 to study the perf01 tilance of a Metal-] tisuI~tor-Serriiconductc~lwith intlixed inversion layer (MIWIL) solar cells as the Al/huinel-oxitJ.e/p-Si structure was developedThe solutioti iricluded the effect of cliange in cell parameters namely: doping concentration, r>xkIe thickness, mobile charge density and metal work furiclion. It also included the dependence on the mobile charge density and fixed oxide charge deiisity A back bias applied between substrate and nielal itiversion grid \\/a? added to the solution It was found out that the efficiency is sensitive to change ill exteinal tmck bias Optimization of efficiency was sought in the range, when O
Inversion layer silicon solar cells are described, They employ the natural inversion layer occuning at the surface of thermally oxidized p-type silicon as one side of an inducedn-p junction. A computer analysis of induced inversion layer MIS silicon solar cell is described. The analysis simultaneously solves transport equations of the device in one dimension and provided thecurrent components. Taking into consideration all the cell parameters has yield more accurate values for cell performance. The study of the performance of the MIS/IL solar cells is based on the concept that there are minority carrier non-equilibrwn devices. In this paper, we discuss the effects of metal properties, namely, electron negativity and metal work fkction on cell characteristics. The model is used to obtain the optimum metal properties for high efficiency MIS/IL solar cells.
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