High efficiency silicon MIS/IL solar cells under external back bias

Abstract

A mode1 to study the perf01 tilance of a Metal-] tisuI~tor-Serriiconductc~lwith intlixed inversion layer (MIWIL) solar cells as the Al/huinel-oxitJ.e/p-Si structure was developedThe solutioti iricluded the effect of cliange in cell parameters namely: doping concentration, r>xkIe thickness, mobile charge density and metal work furiclion. It also included the dependence on the mobile charge density and fixed oxide charge deiisity A back bias applied between substrate and nielal itiversion grid \\/a? added to the solution It was found out that the efficiency is sensitive to change ill exteinal tmck bias Optimization of efficiency was sought in the range, when O<V: O 6 voh, at mobile charge density 10'3<Q,,~5x10'2 (cm-'), doping coilcentration 3x1O1"<:Na<5x I 0IG (cm")), and metal work fitnetion 3<4,,<3.5 (e\.'). Numetical results al-iow that optimum effciency was essentially located around V=O.6 volts 1-91 V. Yu. Yerokliov and I. 1. Melnyk "l,?f7/lueiice of'external bins on plzotoelectric properties of siiicoi? AiIXJL

Optimization of Mis/Il Solar Cells Parameters Using Genetic Algorithm

“…The MIS model is based on the use of internal factors such as built-in charge including fixed oxide charge, mobile charge, interface trapped charge, doping concentration, oxide thickness and metal work function. External parameters will be included namely, external back bias on the inversion grid [9].…”

“…The MIS/IL solar cell photocurrent can be represented as the sum of the electron and hole currents, generated by the light flux F in the field of the base and induced IL [9] and is given by,…”

“…The dependence of of surface potential if, on the value of external back bias V of the inversion grid is calculated from the equation of charge neutrality[9],…”