We report on the achievement of III-nitride blue superluminescent light-emitting diodes on GaN substrates. The epitaxial structure includes an active region made of In0.12Ga0.88N quantum wells in a GaN/AlGaN waveguide. Superluminescence under cw operation is observed at room temperature for a current of 130 mA and a current density of 8 kA/cm2. The central emission wavelength is 420 nm and the emission bandwidth is ∼5 nm in the superluminescence regime. A peak optical output power of 100 mW is obtained at 630 mA under pulsed operation and an average power of 10 mW is achieved at a duty cycle of 20%.

Low thermal resistance of high power superluminescent diodes (SLEDs) by using active multi-mode interferometer (active-MMI) is presented in this paper. The active layer temperature evaluation demonstrates that the power saturation mechanism in active-MMI SLED is heat for the first time. Low thermal resistance of 4.83 K/W in active-MMI SLEDs leads to a high power of 115 mW. Moreover, the effect of the active area size on the output power is demonstrated both experimentally and theoretically. Good agreement between the theoretical and experimental results indicates that active-MMI configuration is a new design in support of efficient heat dissipation and thermal resistance reduction for SLEDs.

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Abstract-High-speed electrical data transmission through lowcost backplanes is a particularly challenging problem. We present for the first time a very effective approach that uses the concept of duobinary signaling to accomplish this task. Using a finite-impulseresponse filter, we are able to compensate for the phase and amplitude response of the backplane such that the resulting frequency response of the channel is that of an ideal duobinary filter. At the output of the backplane, we use an innovative pseudodigital circuit to convert the electrical duobinary to binary. For 10-Gb/s data transmission, we demonstrate a bit error rate 10 13 through electrical backplane traces up to 34 in in length on FR4. A full discussion of the concept, system architecture, and measured results are presented. Analysis is presented that compares and contrasts this approach to PAM-4 and standard nonreturn-to-zero signaling.

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