Shallow n+‐p junctions fabricated on
CF4
reactive‐ion‐etched Si have high leakage currents. The high leakage currents are probably due to stacking faults, which are nucleated and made electrically active by metallic contaminants from the RIE chamber. Low leakage currents can be obtained either by removing the metallic contaminants prior to high‐temperature heat‐treatments, or by gettering the metallic contaminants at the backside of the wafer during high‐temperature (800°C) heat‐treatments.
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