Junction Leakage due to RIE‐Induced Metallic Contamination

Gambino, J.; Monkowski, M.D.; Shepard, J.; Parks, C.

doi:10.1149/1.2086590

Cited by 14 publications

(7 citation statements)

References 9 publications

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“…For example, in cases where RIE was done prior to the junction formation, it has been found that high leakage currents are present, if care is not taken to remove metallic impurities. These high leakage currents are believed to be due to stacking faults, which are nucleated and made electrically active by metallic contaminants from the etching chamber (45).…”

Section: Residues--their Effect Detection and Repercussions--mentioning

confidence: 99%

See 1 more Smart Citation

An Overview of Dry Etching Damage and Contamination Effects

Fonash

1990

J. Electrochem. Soc.

145

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Plasma or dry etching techniques, such as reactive ion etching, magnetron reactive ion etching, electron cyclotron resonance etching, ion beam etching, and plasma etching, can result in damage and contamination of the materials used in device structures and interconnects. The damage that can take place occurs because of ion bombardment, radiationinduced bonding changes, and charge buildup. If not removed, damage can have effects which vary from gettering to creating traps in insulators and gap states in semiconductors. The contamination that can take place can have two forms: residue layers and permeation. The former are ultrathin layers of reaction products that can coat surfaces whereas the latter is the embedding or implantation, and perhaps subsequent diffusion, of impurities. These impurities can range from metals whose source is the processing chamber to hydrogen which is often found in the etch recipe or may even be found due to the presence of water in the processing chamber. If not removed, residues can interfere with subsequent processing such as oxidation and can cause series resistance in contacts. Impurities, if not removed, can have a range of effects from modifying carrier lifetimes to interfering with subsequent processing. Hydrogen, in particular, can affect materials in a number of ways including modifying doping activation.

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Section: Residues--their Effect Detection and Repercussions--mentioning

confidence: 99%

“…These approaches usually rely on actually removing surface layers of the contaminated and permeated materials themselves. In some cases these cleaning techniques have been combined with various types of gettering procedures (42)(43)(44)(45).…”

Section: Impurity Contamination and Permeation--control-mentioning

confidence: 99%

An Overview of Dry Etching Damage and Contamination Effects

Fonash

1990

J. Electrochem. Soc.

145

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“…In particular, the metallic contamination sputtered from the RIE chamber wall enlarges reverse current after sintering. 37 Having no such drawbacks, the S-LPD samples exhibit relatively good thermal stability. Figure 5 shows the accumulative distribution for the reverse currents of all measured diodes.…”

Section: Resultsmentioning

confidence: 99%

Application of Selective Liquid‐Phase Deposition to Fabricate Contact Holes Without Plasma Damage

Yeh¹,

Liu²,

Su³

1999

J. Electrochem. Soc.

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This work develops an alternative method, selective liquid‐phase deposition (S-LPD), to fabricate contact holes instead of reactive ion etching. In preliminary experiments, deep n+/normalp junction diodes with contact holes prepared by S-LPD exhibit much less reverse current, unity ideality factor, larger forward current, lower contact resistance, and higher thermal stability than those prepared by reactive ion etching. Further superiority of plasma damage‐free near‐surface regions is also investigated using Schottky and ultra‐shallow junction diodes. Experimental results indicate that S-LPD can be applied to the submicron contact‐hole process. The data after reverse bias temperature stress reveals the satisfactory reliability of S-LPD contact holes. This work demonstrates that the S-LPD technology is a highly promising means of replacing reactive ion etching processes to form submicron contact holes as reliably as those by wet‐etching. © 1999 The Electrochemical Society. All rights reserved.

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“…9 Following this process, an O 2 downstream plasma treatment and wet cleaning using a solution of H 2 SO 4 and H 2 O 2 were carried out to remove fluorocarbon film on the surface. Wafers were chemically cleaned prior to loading into a RIE reactor.…”

Section: Methodsmentioning

confidence: 99%

Depth distribution of plasma induced damage and dislocation generation due to an interaction of subsequent oxidation

Yamaguchi

Sasaki

Nikoh

et al. 2000

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Side-wall damage in a transmission electron microscopy specimen of crystalline Si prepared by focused ion beam etching Low damage dry etching of III-V materials for heterojunction bipolar transistor applications using a chlorinated inductively coupled plasma Surface damage induced by reactive ion etching ͑RIE͒ was investigated in terms of its depth, distribution, and correlation with dislocation generation due to subsequent oxidation. Damage structure was evaluated using transmission electron microscopy, reflection high energy electron diffraction ͑RHEED͒, Auger electron spectroscopy, and thermal wave measurement technique. A chemical dry etching and surface analyze technique of RHEED and TW were utilized to profile the damage distribution. It is identified that the surface damaged layer consists of two parts; the upper part from the surface to about 4 nm is a heavily damaged amorphous structure containing carbon and the lower part, between 5 and 30 nm, is a single crystal Si with a lot of lattice defects. It is found that RIE damage may form film edge dislocations by the interaction of subsequent selective oxidation even though damage was minimized to suppress oxidation induced stacking faults generation. High leakage current occurs when n ϩ -p junctions are fabricated on this RIE and selective oxidation because of these film edge dislocations. It seems that generation of film edge dislocations has correlated with this carbon contained amorphous layer.

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Junction Leakage due to RIE‐Induced Metallic Contamination

Cited by 14 publications

References 9 publications

An Overview of Dry Etching Damage and Contamination Effects

An Overview of Dry Etching Damage and Contamination Effects

Application of Selective Liquid‐Phase Deposition to Fabricate Contact Holes Without Plasma Damage

Depth distribution of plasma induced damage and dislocation generation due to an interaction of subsequent oxidation

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