Magnetization reversal asymmetry in [Co/Pt]/CoFe/IrMn multilayers with enhanced perpendicular exchange bias J. Appl. Phys. 113, 033901 (2013); 10.1063/1.4775837 Asymmetric magnetic reversal of perpendicular exchange biased ( Co ∕ Pt ) 5 ∕ Ir Mn probed by magnetoresistance and magnetic force microscopy Reduction in critical current of current-induced switching in exchange-biased spin valves J. Appl. Phys. 97, 10C712 (2005); 10.1063/1.1853279
Correlation between perpendicular exchange bias and magnetic anisotropy in IrMn ∕ [ Co ∕ Pt ] n and [ Pt ∕ Co ] n ∕ IrMn multilayersA study on the Co layer thickness dependence of the magnetization reversal process and magnetoresistance of perpendicular exchange-biased Co/ Pt multilayers and spin valves with perpendicular magnetization is presented. The hysteresis of ͓20 Å Pt/ t Å Co͔ 3 / 100 Å IrMn/ 20 Å Pt multilayers with t ജ 5 Å are found to be asymmetric after deposition. This asymmetry reflects a lateral variation in the perpendicular exchange-bias direction due to the growth of IrMn onto multidomain Co/ Pt multilayers. Magnetic annealing in a perpendicular field removes the switching asymmetry and leads to a maximum exchange-bias field of 16.3 mT for t = 7 Å. Perpendicular spin valves with an optimized structure of 50 Ta/ 20 Å Pt/ t Å Co/30 Å Cu/t Å Co/20 Å Pt/6 Å Co/ 3 Å Pt/100 IrMn/ 20 Å Pt are found to exhibit good switching behavior but limited magnetoresistance for small Co layer thickness. The magnetoresistance of these spin valves increases with t up to a maximum of 3.9% for t = 10 Å, beyond which it decreases due to simultaneous magnetization reversal in the ferromagnetic layers. Magnetic field annealing of these top-pinned structures reduces the exchange-bias field and the magnetoresistance.
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