Long wavelength lasers and semiconductor optical amplifiers based on InAs quantum wire-/dot-like active regions were developed on InP substrates dedicated to cover the extended telecommunication wavelength range between 1.4 and 1.65 µm. In a brief overview different technological approaches will be discussed, while in the main part the current status and recent results of quantum-dash lasers are reported. This includes topics like dash formation and material growth, device performance of lasers and optical amplifiers, static and dynamic properties and fundamental material and device modelling.

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We report the observation of continuous-wave second-harmonic generation in a modalphase-matched GaAs/AlGaAs waveguide. The heterostructure has been designed to generate a second-harmonic signal via a type-II process with a fundamental signal around 1.55 μm. Continuous wave conversion enables a quantitative estimation of the conversion efficiency. In our case, η=30%±5% W−1 cm−2 is found experimentally.

We report optical second-harmonic generation ͑SHG͒ through modal phase matching in GaAs/ AlGaAs semiconductor waveguides. Using femtosecond pulses, both type-I and type-II SHG is demonstrated for fundamental wavelengths near 1.55 m.