2003
DOI: 10.1063/1.1596726
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Second-harmonic generation through optimized modal phase matching in semiconductor waveguides

Abstract: We report optical second-harmonic generation ͑SHG͒ through modal phase matching in GaAs/ AlGaAs semiconductor waveguides. Using femtosecond pulses, both type-I and type-II SHG is demonstrated for fundamental wavelengths near 1.55 m.

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Cited by 61 publications
(37 citation statements)
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“…3 and unity (1W ) excitation, corresponding to a (material) power density of ≈ 400M W/cm 2 and comparable to what previously employed for SHG in GaAs/AlGaAs guides. 13 Clearly, a large SHG is associated with the peak of a sinc-like curve and a specific PM condition (horizontal dashes) near λ F F = 1.55µm. Such an individual zero for ∆β, however, is not the norm.…”
Section: -14mentioning
confidence: 99%
See 1 more Smart Citation
“…3 and unity (1W ) excitation, corresponding to a (material) power density of ≈ 400M W/cm 2 and comparable to what previously employed for SHG in GaAs/AlGaAs guides. 13 Clearly, a large SHG is associated with the peak of a sinc-like curve and a specific PM condition (horizontal dashes) near λ F F = 1.55µm. Such an individual zero for ∆β, however, is not the norm.…”
Section: -14mentioning
confidence: 99%
“…[11][12][13][14] Formbirefringence conjugates the large intensities and interaction distances of guided-waves with the possibility of tailoring the dispersion of cross-polarized waves even in isotropic crystals such as GaAs and its composites.…”
Section: -7mentioning
confidence: 99%
“…Since the effective index of a waveguide tends to decrease as the mode order increases, it is the shortest wavelength of the process (the second harmonic in SHG, the pump in DFG) that propagates in a higher order mode. SHG by MPM has been demonstrated in AlGaAs waveguides at wavelengths around 1550 nm using a femtosecond pulsed source [29] and using a continuous-wave source [30] with output secondharmonic powers in excess of 1 μW.…”
Section: Modal Phase Matchingmentioning
confidence: 99%
“…GaAs is a more attractive material for nonlinear optical-wavelength conversion because of its high nonlinear coefficient, broad IR transparency range, and well-developed epitaxial growth technologies. Because of the isotropic nature of GaAs, birefringent phase matching (BPM) is not possible in conventional AlGaAs waveguides, thus various artificial approaches must be adopted, such as form-BPM [3][4][5][6], modal phase matching (MPM) [7,8], and quasi-phase matching (QPM) [9][10][11]. However, no efficient nonlinear waveguide devices based on GaAs/AlGaAs system have been built to date, regardless of the phase matching approaches, because of high waveguide propagation losses.…”
Section: Introductionmentioning
confidence: 98%