Growth of GaAs with orientation-patterned structures for nonlinear optics

High-quality III–V semiconductor MBE growth on Ge/Si virtual substrates for metal-oxide-semiconductor device fabrication

“…Then, low-temperature (450-480 1C) normal GaAs growth (i.e., simultaneous opening of the As and Ga shutters for co-deposition) was carried out for 100 nm-thick growth to assure the restraint of Ge inter-diffusion, followed by conventional high-temperature GaAs growth of 200 nm-thick (6101 C thermocouple temperature, corresponding to a true temperature of 580 1C). During LT MEE and LT normal growth, we kept a low V/III (o12) ratio to enhance self-APDs annihilation [23]. A 10 nm In 0.2 Ga 0.8 As layer was then grown on top of GaAs to produce a channel layer with improved carrier mobility.…”

“…This indicates that HT H 2 annealing efficiently changes the step configuration of the Ge surface and forms double-step-dominated surface on the tilted Si wafer. Yu et al [23] demonstrated that the growth rates of the two domains are different when APDs are formed during growth. Even though the APDs could be buried inside the film after a thick layer was deposited, the layer is much thinner in the area with APDs.…”

Growth of Thick Epitaxial CdTe Films by Close Space Sublimation

“…It has been suggested that the initial reaction between Te and Ge atoms may help the formation of high-quality epilayers through the reduction of anti-phase domain defects. 5,6 Thus, Te-rich CdTe polycrystalline sources were also used in comparison with the usual stoichiometric ones, as the former may promote an efficient Te-Ge bonding process at the initial nucleation stage. The surface morphology was inspected by scanning electron microscopy (SEM), while film quality was further assessed by high resolution x-ray diffraction (HRXRD) using a Bede D1 (Cua1, beam diameter 3 mm).…”

Recent advances in phase matching of second‐order nonlinearities in monolithic semiconductor waveguides

“…Also, any misalignment of the core layer in the regrown material can lead to mode profile oscillations and the formation of an effective index grating. Progress has been made recently to reduce the scattering loss by reducing the corrugations of the domains resulting from original template and regrowth processes [37][38][39]. Minimum losses of 4.5 dB cm 1 at 1.55 μm and 9.7 dB cm 1 at the secondharmonic wavelength were obtained, and the highest internal conversion efficiency of 43% W 1 was achieved in an 8 mm long waveguide under continuous-wave operation [38,39].…”

“…Progress has been made recently to reduce the scattering loss by reducing the corrugations of the domains resulting from original template and regrowth processes [37][38][39]. Minimum losses of 4.5 dB cm 1 at 1.55 μm and 9.7 dB cm 1 at the secondharmonic wavelength were obtained, and the highest internal conversion efficiency of 43% W 1 was achieved in an 8 mm long waveguide under continuous-wave operation [38,39]. Optical parametric oscillators in QPM OP-GaAs pumped by differently polarized pulses were also demonstrated [40,41].…”