ZnO thin films were prepared from metallic zinc and metallic zinc
+
zinc nitride mixture by thermal oxidation. The DC-magnetron sputtering
technique was used to deposit the films under argon and argon
+
nitrogen atmosphere, respectively. The oxide thin films prepared by this method have
wurtzite structure without any preferential orientation. Compared to ZnO films grown from
metallic zinc that were deposited under Ar only (ZA), ZnO films grown from metallic
zinc under nitrogen-rich atmosphere (ZAN) showed a considerably lower average
grain size, and growth of abundant nanorods. XPS analysis failed to detect any
remaining nitrogen in the prepared films. However, the analyses suggest that
nitrogen used in this process can lead to an enhancement of film densification. Room
temperature photoluminescence (PL) spectra of both films revealed five emission bands
located at the same positions: a predominant exciton ultraviolet (UV) (396 nm), a
green (530 nm), a violet (422 nm), a blue (484 nm), and a band to band emission at
354 nm. In addition, ZAN displayed another intense UV emission band peaked at
377 nm.
The CdS thin films were deposited on glass substrate by chemical bath deposition (CBD). The effect of annealing temperature on the morphological, structural, optical and electrical properties of the crystalline CdS films were investigated for different annealing temperature (as deposited, 300, 400 and 500 °C).The annealing time is 1 h. The materials have been prepared using simple aqueous solutions containing cadmium sulfate, as source of cadmium, and thiourea as source of sulfur and ammonium hydroxide as the complexing agent. The temperature of the bath was maintained at low temperature of 80 °C. The surface morphological properties studied by SEM and AFM respectively. The structural properties of CdS thin film was studied by X-ray diffraction. The optical parameter such as transmittance and energy band gap of the films with thermal annealing temperature was investigated by UV-Visible spectrophotometer. The variation of band gap values of CdS thin film samples were found to be in the range of 2.37 to 2.5 eV. Electrical resistivity measurements were carried out in four-probe Van Der Pauw geometry at room temperature by the Hall measurement. SEM image confirmed that film of smooth surface morphology.
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