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The purpose of the present study was to examine the possibility of laser-machining of CuInSe 2-based photovoltaic devices. Therefore, ablation thresholds and ablation rates of ZnO, CuInSe 2 and Mo thin films have been measured for irradiation with nanosecond laser pulses of ultraviolet and visible light and subpicosecond laser pulses of a Ti : sapphire laser. The experimental results were compared with the theoretical evaluation of the samples heat regime obtained from numerical calculations. In addition, the photo-electrical properties of the solar cells were measured before and after laser-machining. Scanning electron microscopy and energy dispersive x-ray analyses were employed to characterize the laser-induced ablation channels. As a result, two phenomena were found to limit the laser-machining process: (i) residues of Mo that were projected onto the walls of the ablation channel and (ii) the metallization of the CuInSe 2 semiconductor close to the channel. Both effects lead to a shunt in the device that decreases the photovoltaic efficiency. As a consequence of these limiting effects, micromachining of CuInSe 2-based solar cells was not possible with nanosecond laser pulses. Only subpicosecond laser pulses provided selective or complete ablation of the thin layers without a relevant change in the photoelectrical properties.

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