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CeOz thin films were prepared by metal-organic chemical vapor deposition (MOCVD) using tetrakis(2,2,6,6-tetramethyl-3,5-heptanedionato)cerium(iv), [Ce(thd)4], as the precursor. The films were grown in a horizontal cold-wall reactor at low pressure and temperatures of 400-900 "C in an atmosphere of argonloxygen. SrTi03, yttria stabilized zirconia (YSZ), and MgO were used as substrates. Films were prepared on single crystalline substrates with a (100) orientation as well as on polycrystalline YSZ. The film microstructure was investigated by X-ray diffraction and the surface morphology was studied by scanning electron microscopy (SEM). The growth rate was determined using data obtained by profilometry and cross-section SEM. The films are polycrystalline with a (100) preferential orientation with respect to the substrate orientation. Low oxygen partial pressures deteriorated the crystalline quality. The SEM images of the surface and the cross sections demonstrated a columnar microstructure. The growth rates in the range of 25-250 nmlh were strongly dependent on the precursor feeding rate but less affected by the deposition temperature and substrate material.

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The aim of this study was (i) to investigate alternatives to the very toxic Ni(C0)4, (ii) optimization of the parameters for Ni film growth, and (iii) characterization of the film morphology. The thermal behaviour of the precursors bis(dirnethylglyoximato)Ni(II), [Ni(dmg)2], bis(2,2,6,6-tetramethyl-3,5-heptandionato)Ni(II), [Ni(thd)2], N,N'-ethylenebis(2,4-pentandioniminoato)Ni(II), [Ni(enacac)], and bis(2-amino-pent-2-en-4-onato)Ni(II), [Ni(apo)2] were investigated in a model reactor. Furthermore, the evaporation rates of these compounds were determined. Metallic nickel films were obtained using Ni(drng)2 as precursor. The deposition was canied out in a horizontal quartz reactor at reduced pressure in a hydrogen/helium atmosphere. The films were analysed by profilometry, X-ray diffraction, atomic force microscopy (AFM), fourpoint resistivity measurements and electron spectroscopy for chemical analysis (ESCA). Comparison of the AFM and ESCA data with the electrical resistances resulted in a two layer film model.