Some cerium .beta.-diketonate derivatives as MOCVD precursors

Becht, M.; Gerfin, Tobias; Dahmen, K. H.

doi:10.1021/cm00025a026

Cited by 70 publications

(47 citation statements)

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“…In agreement with previous reports, [37,49] Ce(dpm) 4 (m/z = 872, 1 %) fragmentation was dominated by the rapid ligand loss in two subsequent steps, yielding [Ce(dpm peaks were also identified. A similar fragmentation might also be expected in a low pressure plasma, due to similar electron energies.…”

Section: Precursor Characterizationsupporting

confidence: 92%

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Nucleation and Growth of Nanophasic CeO₂ Thin Films by Plasma‐Enhanced CVD

Barreca¹,

Gasparotto

Tondello

et al. 2003

Chemical Vapor Deposition

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Nanophasic CeO 2 -based thin films were grown at low temperatures on SiO 2 and Si(100) by plasma-enhanced (PE) CVD from a Ce IV b-diketonate first generation precursor. Film depositions were carried out in low-pressure Ar±O 2 plasmas at temperatures between 150 C and 300 C. The film microstructure was investigated by glancing incidence X-ray diffraction (GIXRD) and transmission electron microscopy (TEM), while the surface and in-depth chemical composition was studied by X-ray photoelectron spectroscopy (XPS), and secondary ion mass spectrometry (SIMS), respectively. Optical properties were analyzed by UV-vis optical absorption. Nanostructured CeO 2 -based films, with crystal size less than 6 nm and a controllable Ce IV /Ce III ratio, were obtained at temperatures even lower than that required for precursor vaporization (170 C). In particular, TEM analyses showed an island growth mode and different microstructural features as a function of the substrate used.

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Section: Precursor Characterizationsupporting

confidence: 92%

“…As a matter of fact, the ±OH groups, present in large amounts on silica, might strongly favor precursor decomposition, [37,58] acting as nucleation sites and accounting for the lower mean nanocrystal size of SiO 2 -supported films.…”

Section: Microstructural Characterization: Gixrd and Tem Analysesmentioning

confidence: 99%

Nucleation and Growth of Nanophasic CeO₂ Thin Films by Plasma‐Enhanced CVD

Barreca¹,

Gasparotto

Tondello

et al. 2003

Chemical Vapor Deposition

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“…This was expected because of the high tendency of fluorine to bind cerium, which was also documented by Becht er al. 4 It can be expected that fluorine goes upon deposition into the film together with cerium. This was also proven with NRB (nuclear resonance broadening) measurements from thin films in the present study (see later) and from the results reported by Nykanen et a1.…”

Section: Thermal Analysismentioning

confidence: 99%

Potential cerium precursors for blue colour in thin film electroluminescent devices grown by atomic layer epitaxy

Leskelä¹,

Vasama²,

Härkönen³

et al. 1996

Adv. Mater. Opt. Electron.

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“…[17] In fact, the presence of ±OH and ±OR moieties on the substrate in CVD processes enhances the precursor decomposition from the vapor phase, especially in the case of metal b-diketonates. [23,24] Moreover, the plasma action in PE-CVD permits the achievement of nanosystems thanks to the competition between deposition/ablation phenomena characterizing glow discharges. [6] In these processes, plasma promotes and activates chemical reactions both in the gas phase and on the substrate (Fig.…”

Section: Introductionmentioning

confidence: 99%

Innovative Approaches to Oxide Nanosystems: CeO₂‐ZrO₂ Nanocomposites by a Combined PE‐CVD/Sol–Gel Route

Armelao¹,

Barreca

Bottaro

et al. 2004

Chemical Vapor Deposition

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A novel combined PE-CVD/sol±gel approach to oxide-based nanosystems is proposed and employed for the synthesis of CeO 2 ±ZrO 2 nanocomposites. The method consists of the plasma-enhanced (PE) CVD of ceria (guest) on a zirconia xerogel ZrO x (OH) y (OR) z (host) prepared by sol±gel (SG) at a temperature of 200 C. The system evolution under annealing in air (600 C and 900 C, 1 h) and its mutual relationships with the synthesis conditions were investigated in detail by a multi-technique characterization. The proposed synthetic pathway enables the synthesis of CeO 2 ±ZrO 2 nanostructured systems ranging from composites to solid solutions, as a function of thermal treatment and Ce/Zr ratio as well. In this framework, particular attention is devoted to achieving an intimate Ce/Zr intermixing by exploiting the synergy between the SG xerogel properties (porosity, ±OH content) and the peculiar actions exerted by plasma (ablation/deposition, infiltration power). Such features enable an in-depth penetration of ceria into the inner zirconia xerogel layers already in the as-grown systems.

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Some cerium .beta.-diketonate derivatives as MOCVD precursors

Cited by 70 publications

References 0 publications

Nucleation and Growth of Nanophasic CeO₂ Thin Films by Plasma‐Enhanced CVD

Nucleation and Growth of Nanophasic CeO₂ Thin Films by Plasma‐Enhanced CVD

Potential cerium precursors for blue colour in thin film electroluminescent devices grown by atomic layer epitaxy

Innovative Approaches to Oxide Nanosystems: CeO₂‐ZrO₂ Nanocomposites by a Combined PE‐CVD/Sol–Gel Route

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Some cerium .beta.-diketonate derivatives as MOCVD precursors

Cited by 70 publications

References 0 publications

Nucleation and Growth of Nanophasic CeO2 Thin Films by Plasma‐Enhanced CVD

Nucleation and Growth of Nanophasic CeO2 Thin Films by Plasma‐Enhanced CVD

Potential cerium precursors for blue colour in thin film electroluminescent devices grown by atomic layer epitaxy

Innovative Approaches to Oxide Nanosystems: CeO2‐ZrO2 Nanocomposites by a Combined PE‐CVD/Sol–Gel Route

Contact Info

Product

Resources

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Nucleation and Growth of Nanophasic CeO₂ Thin Films by Plasma‐Enhanced CVD

Nucleation and Growth of Nanophasic CeO₂ Thin Films by Plasma‐Enhanced CVD

Innovative Approaches to Oxide Nanosystems: CeO₂‐ZrO₂ Nanocomposites by a Combined PE‐CVD/Sol–Gel Route