Amorphous GeO x alloys were prepared by evaporation of GeO 2 powder on substrates maintained at 100°C. The evolution of the structure was investigated by infrared-absorption spectrometry, Raman spectrometry and transmission electron microscopy experiments for annealing temperatures less than 600°C. These experiments allowed us to follow the phase separation of the alloy and to observe the appearance of amorphous and crystallized Ge aggregates. The evolution of the photoluminescence in the range of 560-1550 nm was correlated to the structure of the films.

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To cite this version:M. Ardyanian, H. Rinnert, M. Vergnat. Structure and photoluminescence properties of evaporated GeO[sub x]∕ SiO[sub 2] multilayers.Amorphous GeO x / SiO 2 multilayers were prepared by successive evaporations of GeO 2 and SiO 2 powders onto substrates maintained at 100°C. The evolution of the structure was investigated by x-ray reflectometry, transmission electron microscopy, infrared-absorption spectrometry and Raman spectrometry for annealing temperatures less than 800°C. These experiments allowed us to follow the phase decomposition of the GeO x alloy and to observe the appearance of amorphous and crystallized germanium aggregates. The evolution of the photoluminescence in the range of 0.8-2.2 eV was correlated to the structure of the films.

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