Structure and photoluminescence properties of evaporated GeOx∕SiO2 multilayers

Abstract

To cite this version:M. Ardyanian, H. Rinnert, M. Vergnat. Structure and photoluminescence properties of evaporated GeO[sub x]∕ SiO[sub 2] multilayers.Amorphous GeO x / SiO 2 multilayers were prepared by successive evaporations of GeO 2 and SiO 2 powders onto substrates maintained at 100°C. The evolution of the structure was investigated by x-ray reflectometry, transmission electron microscopy, infrared-absorption spectrometry and Raman spectrometry for annealing temperatures less than 800°C. These experiments allowed us to follow the phase decomposition of the GeO x alloy and to observe the appearance of amorphous and crystallized germanium aggregates. The evolution of the photoluminescence in the range of 0.8-2.2 eV was correlated to the structure of the films.

Influence of hydrogenation on the structure and visible photoluminescence of germanium oxide thin films

“…Our group has recently prepared amorphous SiO x [14] and GeO x [15,16] thin films by the evaporation of SiO or GeO 2 powder. The as-deposited samples are substoichiometric and thermal treatments provoke a decomposition phenomenon with the apparition of silicon or germanium aggregates growing with increasing annealing temperature.…”

Anomalous temperature dependence of photoluminescence in GeO x films and GeO x /SiO2 nano-heterostructures

“…The last two components are more volatile, but, unlike O 2 , GeO is easily deposits onto cool substrate. So, the deposited germanium oxide is substoichiometric, namely GeO x , where x is close to 1 [7]. In [7], it was shown that silicon oxide layers have composition SiO 2 .…”

“…So, the deposited germanium oxide is substoichiometric, namely GeO x , where x is close to 1 [7]. In [7], it was shown that silicon oxide layers have composition SiO 2 . The set of samples was deposited.…”

“…The observed peak at 815 cm -1 is assigned to Ge-O-Ge stretching vibration mode. It is known that in GeO x films this peaks approximately linearly shift depending on stoichiometry parameter x [7,13]. Jishiashvili and Kutelia [14] obtained the following formula relating vibration frequency ω (in inverse centimeters) and the stoichiometry parameter x:…”

“…Photoluminescence of Si suboxide films is quite well studied [1][2][3][4], but similar Ge subox ide films are poorly studied. Optical properties of Ge suboxide films containing Ge nanocrystals were stud ied experimentally [5][6][7][8]. It is known that defects play important role in photoluminescence of dielectrics.…”