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After 50 years of exponential increase in computing efficiency, the technology of today's electronics is approaching its physical limits, with feature sizes smaller than 10 nm. New schemes must be devised to contain the ever-increasing power consumption of information and communication systems 1 , which requires the introduction of non-traditional materials and new state variables. As recently highlighted 2 , the remanence associated with collective switching in ferroic systems is appealing to reduce power consumption. A particularly promising approach is spintronics, which relies on ferromagnets to provide non-volatility and to generate and detect spin currents 3. However, magnetization reversal by spin transfer torques 4 is a power consuming process. This is driving research on multiferroics to achieve a low-power electricfield control of magnetization 5 , but practical materials are scarce and magnetoelectric switching remains difficult to control. Here, we demonstrate an alternative strategy to achieve low-power spin detection, in a non-magnetic system. We harness the electric-field-induced ferroelectriclike state of SrTiO3 6-9 to manipulate the spin-orbit properties 10 of a two-dimensional electron gas 11 , and efficiently convert spin currents into positive or negative charge currents, depending on the polarisation direction. This non-volatile effect opens the way to the electric-field control of spin currents and to ultralow-power spintronics, in which non-volatility would be provided by ferroelectricity rather than by ferromagnetism.

Oxide interfaces exhibit a broad range of physical effects stemming from broken inversion symmetry. In particular, they can display non‐reciprocal phenomena when time reversal symmetry is also broken, e.g., by the application of a magnetic field. Examples include the direct and inverse Edelstein effects (DEE, IEE) that allow the interconversion between spin currents and charge currents. The DEE and IEE have been investigated in interfaces based on the perovskite SrTiO3 (STO), albeit in separate studies focusing on one or the other. The demonstration of these effects remains mostly elusive in other oxide interface systems despite their blossoming in the last decade. Here, the observation of both the DEE and IEE in a new interfacial two‐dimensional electron gas (2DEG) based on the perovskite oxide KTaO3 is reported. 2DEGs are generated by the simple deposition of Al metal onto KTaO3 single crystals, characterized by angle‐resolved photoemission spectroscopy and magnetotransport, and shown to display the DEE through unidirectional magnetoresistance and the IEE by spin‐pumping experiments. Their spin–charge interconversion efficiency is then compared with that of STO‐based interfaces, related to the 2DEG electronic structure, and perspectives are given for the implementation of KTaO3 2DEGs into spin–orbitronic devices is compared.

Due to the issues associated with rare-earth elements, there arises a strong need for magnets with properties between those of ferrites and rare-earth magnets that could substitute the latter in selected applications. Here, we produce a high remanent magnetization composite bonded magnet by mixing FeCo nanowire powders with hexaferrite particles. In the first step, metallic nanowires with diameters between 30 and 100 nm and length of at least 2 μm are fabricated by electrodeposition. The oriented as-synthesized nanowires show remanence ratios above 0.76 and coercivities above 199 kA/m and resist core oxidation up to 300 °C due to the existence of a >8 nm thin oxide passivating shell. In the second step, a composite powder is fabricated by mixing the nanowires with hexaferrite particles. After the optimal nanowire diameter and composite composition are selected, a bonded magnet is produced. The resulting magnet presents a 20% increase in remanence and an enhancement of the energy product of 48% with respect to a pure hexaferrite (strontium ferrite) magnet. These results put nanowire–ferrite composites at the forefront as candidate materials for alternative magnets for substitution of rare earths in applications that operate with moderate magnet performance.

Rashba interfaces have emerged as promising platforms for spin-charge interconversion through the direct and inverse Edelstein effects. Notably, oxide-based two-dimensional electron gases display a large and gate-tunable conversion efficiency, as determined by transport measurements. However, a direct visualization of the Rashba-split bands in oxide two-dimensional electron gases is lacking, which hampers an advanced understanding of their rich spin-orbit physics. Here, we investigate KTaO3 two-dimensional electron gases and evidence their Rashba-split bands using angle resolved photoemission spectroscopy. Fitting the bands with a tight-binding Hamiltonian, we extract the effective Rashba coefficient and bring insight into the complex multiorbital nature of the band structure. Our calculations reveal unconventional spin and orbital textures, showing compensation effects from quasi-degenerate band pairs which strongly depend on in-plane anisotropy. We compute the band-resolved spin and orbital Edelstein effects, and predict interconversion efficiencies exceeding those of other oxide two-dimensional electron gases. Finally, we suggest design rules for Rashba systems to optimize spin-charge interconversion performance.

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Two-dimensional electron gases (2DEGs) can form at the surface of oxides and semiconductors or in carefully designed quantum wells and interfaces. Depending on the shape of the confining potential, 2DEGs may experience a finite electric field, which gives rise to relativistic effects such as the Rashba spinorbit coupling. Although the amplitude of this electric field can be modulated by an external gate voltage, which in turn tunes the 2DEG carrier density, sheet resistance and other related properties, this modulation is volatile. Here, we report the design of a "ferroelectric" 2DEG whose transport properties can be electrostatically switched in a non-volatile way. We generate a 2DEG by depositing a thin Al layer onto a SrTiO3 single crystal in which 1% of Sr is substituted by Ca to make it ferroelectric. Signatures of the ferroelectric phase transition at 25 K are visible in the Raman response and in the temperature dependences of the carrier density and sheet resistance that shows a hysteretic dependence on electric field as a consequence of ferroelectricity. We suggest that this behavior may be extended to other oxide 2DEGs, leading to novel types of ferromagnet-free spintronic architectures.

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