After 50 years of exponential increase in computing efficiency, the technology of today's electronics is approaching its physical limits, with feature sizes smaller than 10 nm. New schemes must be devised to contain the ever-increasing power consumption of information and communication systems 1 , which requires the introduction of non-traditional materials and new state variables. As recently highlighted 2 , the remanence associated with collective switching in ferroic systems is appealing to reduce power consumption. A particularly promising approach is spintronics, which relies on ferromagnets to provide non-volatility and to generate and detect spin currents 3. However, magnetization reversal by spin transfer torques 4 is a power consuming process. This is driving research on multiferroics to achieve a low-power electricfield control of magnetization 5 , but practical materials are scarce and magnetoelectric switching remains difficult to control. Here, we demonstrate an alternative strategy to achieve low-power spin detection, in a non-magnetic system. We harness the electric-field-induced ferroelectriclike state of SrTiO3 6-9 to manipulate the spin-orbit properties 10 of a two-dimensional electron gas 11 , and efficiently convert spin currents into positive or negative charge currents, depending on the polarisation direction. This non-volatile effect opens the way to the electric-field control of spin currents and to ultralow-power spintronics, in which non-volatility would be provided by ferroelectricity rather than by ferromagnetism.
Oxide interfaces exhibit a broad range of physical effects stemming from broken inversion symmetry. In particular, they can display non‐reciprocal phenomena when time reversal symmetry is also broken, e.g., by the application of a magnetic field. Examples include the direct and inverse Edelstein effects (DEE, IEE) that allow the interconversion between spin currents and charge currents. The DEE and IEE have been investigated in interfaces based on the perovskite SrTiO3 (STO), albeit in separate studies focusing on one or the other. The demonstration of these effects remains mostly elusive in other oxide interface systems despite their blossoming in the last decade. Here, the observation of both the DEE and IEE in a new interfacial two‐dimensional electron gas (2DEG) based on the perovskite oxide KTaO3 is reported. 2DEGs are generated by the simple deposition of Al metal onto KTaO3 single crystals, characterized by angle‐resolved photoemission spectroscopy and magnetotransport, and shown to display the DEE through unidirectional magnetoresistance and the IEE by spin‐pumping experiments. Their spin–charge interconversion efficiency is then compared with that of STO‐based interfaces, related to the 2DEG electronic structure, and perspectives are given for the implementation of KTaO3 2DEGs into spin–orbitronic devices is compared.
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