Voltage control of magnetism through electric field‐induced oxygen motion (magneto‐ionics) could represent a significant breakthrough in the pursuit for new strategies to enhance energy efficiency in magnetically actuated devices. Boosting the induced changes in magnetization, magneto‐ionic rates and cyclability continue to be key challenges to turn magneto‐ionics into real applications. Here, it is demonstrated that room‐temperature magneto‐ionic effects in electrolyte‐gated paramagnetic Co3O4 films can be largely increased both in terms of generated magnetization (6 times larger) and speed (35 times faster) if the electric field is applied using an electrochemical capacitor configuration (utilizing an underlying conducting buffer layer) instead of placing the electric contacts at the side of the semiconductor (electric‐double‐layer transistor‐like configuration). This is due to the greater uniformity and strength of the electric field in the capacitor design. These results are appealing to widen the use of ion migration in technological applications such as neuromorphic computing or iontronics in general.

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The development of active and stable earth-abundant catalysts for hydrogen and oxygen evolution is one of the requirements for successful production of renewable fuels.

In situ nitrogen doping of aluminum phosphate has been investigated in two dierent plasma enhanced atomic layer deposition (PE-ALD) processes. The rst method consisted of the combination of trimethyl phosphate plasma (TMP*) with a nitrogen plasma and trimethyl aluminum (TMA), i.e. TMP* -N 2 * -TMA. The second method replaces TMP* with a diethylphosphoramidate plasma (i.e. DEPA* -N 2 * -TMA), of which the amine group could further aid nitrogen doping and/or eliminate the need for a nitrogen plasma step. 1At a substrate temperature of 320 • C, the TMP*-based process showed saturated growth (0.8 nm/cycle) of a nitrogen doped (approximately 8 at.%) Al phosphate, while the process using DEPA* showed a similar amount of nitrogen but a signicantly higher growth rate (1.4 nm/cycle). In the latter case, nitrogen doping could also be achieved without the nitrogen plasma, but this leads to a high level of carbon contamination.Both lms were amorphous as-deposited, while X-ray diraction peaks related to AlPO 4 appeared after annealing in a He atmosphere. For high coating thickness (> 2 nm), a signicant increase in the Li-ion transmittance was found after nitrogen doping, although the coating has to be electrochemically activated.At lower thickness scales, such activation was not needed and nitrogen doping was found to double the eective transversal electronic conductivity. For the eective transversal ionic conductivity, no conclusive dierence was found. When a lithium nickel manganese cobalt oxide (NMC) powder is coated with one ALD cycle of N-doped Al phosphate, the rate capability and the energy eciency of the electrode improves.

LIBs that provided an understanding of how ITO works in LIBs. There are three main ways ITO materials have been exploited-i) As an electrode protecting layer: [5] ITO coated on LiMn 2 O 4 (LMO) showed enhancement in the electrochemical performance when compared to pristine LMO. It is believed that the conductive ITO layer can reduce cell polarization, interparticle resistance, and charge-transfer resistance between LMO particles and the electrolyte solution. Furthermore, the ITO layer could suppress Mn dissolution as well. ii) As a current collector: [6] The electronic conductivity of ITO makes it comparable to the commonly used current collector such as Cu, Pt, and TiN. Additionally, oxidation, a major issue for TiN and Cu current collectors, does not occur in ITO as the ions involved are already in the highest oxidation state (In 3+ and Sn 4+). This makes ITO a promising candidate to serve as a current collector especially suitable for potentially high temperature conditions. iii) As an anode: [7] In 2 O 3 and SnO 2 are electrochemically active toward lithium at the potential range of 0-3 V (vs Li + /Li) with high theoretical capacities (In 2 O 3 578 mAh g −1 , SnO 2 782 mAh g −1). Based on this background, it is believed that ITO can also be exploited as a potential anode material for LIBs. Several deposition techniques are reported to obtain ITO thin-films including spray pyrolysis, [8] sol-gel methods, [9] pulsed laser deposition, [10] e-beam evaporation, [11] physical vapor deposition, [12] chemical vapor deposition, [13] and atomic layer deposition (ALD). [14] Among these methods, ALD is a thin-film deposition technique that is based on alternating, self-limiting chemical reactions between gaseous precursors and a solid surface to produce high quality, uniform and conformal coatings even at low growth temperatures. [15] The ALD method enables precise control over the thickness, composition, and structure (such as intermixed or laminated structure) of the films and allows for conformal coatings to be applied on all exposed complex surfaces, such as 3D silicon micropillars, [16] 3D anodic aluminum oxide, [17] aerogel, [18] and mesoporous membranes. [19] The preparation of ITO thinfilms via the ALD method was reported in several previous This work demonstrates the possible usages of indium tin oxide (ITO) thin-films as multifunctional coatings on V 2 O 5 model electrodes for lithium-ion batteries (LIBs). The thin films are produced with the atomic layer deposition (ALD) method via adjusting the ratio of In 2 O 3 and SnO 2 sub-layers to a well-controlled In: Sn contents. The highest conductivity value (7.37 × 10 −4 Ω cm) of as-grown ITO film is obtained from the sample containing 5% SnO 2 of overall ALD cycles. The ITO thin-films are further investigated as multifunctional coatings on ALD V 2 O 5 electrodes for LIBs: At first, dual electronic and ionic conductive protecting properties of ITO layer are explored to attenuate the fading of the battery capacity by improving the cycling stability. Second, the feasi...

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Because of their unique structural, chemical, optical and biological properties, metal phosphate coatings are highly versatile for various applications. Thermodynamically facile and favorable functionalization of phosphate moieties (like orthophosphates, metaphosphates, pyrophosphates, phosphorus-doped oxides...) make them highly sought-after functional materials as well. Being a sequential self-limiting technique, atomic layer deposition has been used for producing high quality conformal coatings with sub-nanometer control. In this review, different atomic layer deposition based strategies used for the deposition of phosphate materials are discussed. The mechanisms underlying those strategies are discussed, highlighting advantages and limitations of specific process chemistries. In a second part, the application of metal phosphates deposited through atomic layer deposition in energy storage and other emerging technologies such as electrocatalysis, biomedical or luminescence applications are summarized. Next to this, perspectives on untangled knowledge gaps and opportunities for future research are also emphasized.1

A plasma-enhanced ALD process has been developed to deposit nickel phosphate. The process combines a trimethylphosphate (TMP) plasma with an oxygen plasma and nickelocene at a substrate temperature of 300°C....