The analytical I-V model of single electron transistor has been established and simulated by combining the Monte Carlo method with the Master Equation method. Effects of gate voltage, drain voltage, temperature, and tunneling junction resistance on electrical characteristics of a single electron transistor are analyzed. Simulation results indicate that for the device with symmetrical tunneling junction structure, the Coulomb staircases shift with increasing gate voltage, and the Coulomb oscillation amplitude increases with increasing drain voltage, while the Coulomb gaps decrease. The Coulomb staircases and the Coulomb oscillation disappear gradually with increasing temperature. The Coulomb blockade effects become more significant when the resistance ratio of the two asymmetrical tunneling junctions increases.
High charge state carbon ions are observed from the rear surface of thin foil irradiated by intense femtosecond laser pulse at intensities up to 6.4×1018 W/cm2. The origin of the ions is studied by analyzing the basic ionization process occurring at the rear surface. It is shown that the normally dominant ionization process is field ionization by barrier suppression for charge states less than He-like (C4+), while collisional ionization is significant for C5+ and C6+.
The characteristics of a real-time ion detectorplastic scintillator are experimentally investigated on an electrostatic accelerator. The sensitivity, the dynamic range, the energy response, and the spatial resolution of the plastic scintillator are calibrated, and then compared with those of other ion detectors. Meanwhile, the possibility for the plastic scintillator to be used as a diagnostic tool in laser-driven ion acceleration experiment is discussed. The plastic scintillator provides an efficient tool for online ion detection in the experiments of high-repetition-rate laser-driven ion accelerations.
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