The deployment of photonic integrated circuits (PICs) necessitates an integration platform that is scalable, high-throughput, cost-effective, and power-efficient. Here we present a monolithic InP on SOI platform to synergize the advantages of two mainstream photonic integration platforms: Si photonics and InP photonics. This monolithic InP/SOI platform is realized through the selective growth of both InP sub-micron wires and large dimension InP membranes on industry-standard (001)-oriented silicon-on-insulator (SOI) wafers. The epitaxial InP is in-plane, dislocation-free, site-controlled, intimately positioned with the Si device layer, and placed right on top of the buried oxide layer to form “InP-on-insulator”. These attributes allow for the realization of various photonic functionalities using the epitaxial InP, with efficient light interfacing between the III–V devices and the Si-based waveguides. We exemplify the potential of this InP/SOI platform for integrated photonics through the demonstration of lasers with different cavity designs including subwavelength wires, square cavities, and micro-disks. Our results here mark a critical step forward towards fully-integrated Si-based PICs.
Realization of fully integrated silicon photonics has been handicapped by the lack of a reliable and efficient III-V light source on Si. Specifically, electrically pumped continuous wave (CW) lasing and operation sustainable at high temperatures are critical for practical applications. Here, we present the first electrically pumped room temperature (RT) CW lasing results of 1.55 μm quantum dash (QDash) lasers directly grown on patterned on-axis (001) Si using metal organic chemical vapor deposition (MOCVD). Adopting a dash-in-well structure as the active medium, the growth of QDash was optimized on an InP on Si template. Incorporating the advantages of the optimized material growth and device fabrication, good laser performance including a low threshold current of 50 mA, a threshold current density of 1.3 kA/cm2 and operation at elevated temperature up to 59 °C in CW mode was achieved. Comparison of lasers grown on Si and native InP substrates in the same growth run was made. Based on the laser characteristics measured at room temperature and elevated temperatures, the QDash quality on the two substrates is comparable. These results suggest that MOCVD is a viable technique for lasers on Si growth and represent an advance towards silicon-based photonic-electronic integration and manufacturing.
Photodetectors on Si with high responsivity, large bandwidth, and multispectral operation are required for high data rate communications using Si photonics. We report characteristics of InP-based quantum dash (QDash) photodetectors with a p-i-n structure directly grown on (001) Si. Three layers of quantum dashes were grown on InP on Si templates and fabricated into waveguide photodetectors. The QDash photodetectors can operate from 1240 nm to 1640 nm, covering the entire telecommunication band. A low dark current density of 2.1 × 10−6 A/cm2, responsivities of 0.35 ± 0.05 A/W at 1550 nm and 0.94 ± 0.05 A/W at 1310 nm, and a 3-dB bandwidth of 10.3 GHz were demonstrated. Our results show that the QDash photodetectors grown on Si hold great potential for on-chip integration in Si-photonics.
SiO2
was deposited on
GaN
by radio-frequency sputtering to fabricate metal-insulator-semiconductor (MIS) capacitors. Before the deposition, an ultrathin
GaOxnormalNy
interlayer was thermally grown on the
GaN
wafer to improve the quality of the insulator/
GaN
interface. The interface-trap density at
0.4eV
below the conduction bandedge was reduced by one order compared with that of a sample without the
GaOxnormalNy
interlayer. Annealing in
NO
gas at
800°C
was conducted on both samples, and turned out to greatly suppress their oxide charges. The
NO
-annealed sample with the
GaOxnormalNy
interlayer achieved the lowest oxide-charge density of
1.7×1011cm−2
, as compared to
9.5×1011cm−2
for its counterpart without the
GaOxnormalNy
interlayer and about
8.0×1012cm−2
for the two nonannealed samples. Moreover, the
NO
annealing was found to effectively reduce border traps. Secondary-ion mass spectrometry analysis was performed to explain how the
GaOxnormalNy
interlayer and
NO
annealing affect the performance of the
GaN
MIS capacitors.
Semiconductor lasers directly grown on silicon offer great potential as critical components in high-volume, low-cost integrated silicon photonics circuits. Although InAs/InP quantum dash (QDash) lasers on native InP substrate emitting at 1.5 μm (C-band) have demonstrated notable performance, the growth of InAs/InP QDash lasers on silicon remains undeveloped because of the 8% lattice mismatch between InP and silicon. Here we report advances of growth techniques leading to the first C-band room-temperature continuous-wave electrically pumped QDash lasers on CMOS standard (001) silicon substrates by metalorganic chemical vapor deposition. A correlation between various material characterizations and device performance is analyzed for different QDash laser structures grown on planar nominal (001) silicon. With the optimized QDash growth and improved fabrication process, the lowest threshold current density of
1.5
kA
/
cm
2
was determined on an
8
μm
×
1.5
mm
device on planar silicon with a single facet output power exceeding 14 mW. The device results illustrate the good material quality of the QDash lasers grown on silicon, suggesting potential applications for other active components of photonic integrated circuits, such as semiconductor optical amplifiers, modulators, and photodetectors.
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