This paper presents a short review of the microwave acoustics area, where exciting material innovations and performance advancements have been made in the past decade. The ever-growing demand for more sophisticated passive signal processing functions on-chip has fueled these developments. As a result, microwave acoustic devices have maintained performance leadership in mobile applications. By evaluating three fundamental parameters, namely electromechanical coupling (k 2 ), quality factors, and frequency scalability, of microwave acoustics, this paper aims to, extensively but not exhaustively, capture the rationales behind approaches achieving higher performance microsystems. Outlooks for different material systems and addressing their underlying challenges are also offered in hopes of establishing a balanced roadmap for future microwave acoustics development.
This work presents a new class of microelectromechanical system (MEMS) resonator toward 60 GHz for the fifth-generation (5G) wireless communications. The wide range of the operating frequencies is achieved by resorting to different orders of the antisymmetric Lamb wave modes in a 400-nm-thick Z-cut lithium niobate thin film. The resonance of 55 GHz demonstrated in this work marks the highest operating frequency for piezoelectric electromechanical devices. The fabricated device shows an extracted mechanical Q of 340 and an f × Q product of 1.87 × 10 13 in a footprint of 2 × 10 −3 mm 2. The performance has shown the strong potential of LiNbO 3 antisymmetric mode devices for front-end applications in 5G high-band.
This work presents a class of micro-electromechanical system (MEMS)-driven radio frequency filters in the X-band. The X-band center frequencies are achieved by resorting to the third-order antisymmetric Lamb wave mode (A3) in a 650-nm-thick Z-cut lithium niobate thin film. A novel bandwidth (BW) widening technique based on using the self-inductance of the top interdigital transducers and bus lines is proposed to overcome the limitations set by the electromechanical coupling (k 2 t) and satisfy the demands in miniaturization and wide BW. Four different designs of the filters are designed and fabricated to show the trade-off among BW, insertions loss (IL), out-of-band rejections, and footprint. Due to the spurious-free and high-Q performance of the A3 lithium niobate resonators, the fabricated A3 lithium niobate filters have demonstrated small in-band ripples and sharp roll-offs. One of these fabricated has demonstrated a 3-dB BW of 190 MHz, an IL of 1.5 dB, and a compact footprint of 0.56 mm 2. Another design is fabricated to demonstrate a 3-dB BW of 170 MHz, an IL of 2.5 dB, an outof-band rejection of 28 dB, and a compact footprint of 1 mm 2 .
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