4.5 GHz Lithium Niobate MEMS Filters With 10% Fractional Bandwidth for 5G Front-Ends

Yang, Yansong; Lu, Ruochen; Gao, Liuqing; Gong, Songbin

doi:10.1109/jmems.2019.2922935

Cited by 91 publications

(36 citation statements)

References 9 publications

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“…Based on Fig. 3, it is feasible to achieve 5 GHz with a 600-nm feature size on 490-nm-thick Z-cut LiNbO3 [58]. Second, the slow vg of A1 (e.g., 3000 m/s at 5 GHz) enables longer delays over the same length in comparison to alternatives with faster vg (e.g., S0, or SH0) [62], thus permitting a smaller device footprint.…”

Section: B A1 Mode In Lithium Niobate Thin Filmmentioning

confidence: 99%

5-GHz Antisymmetric Mode Acoustic Delay Lines in Lithium Niobate Thin Film

Yang

et al. 2020

IEEE Trans. Microwave Theory Techn.

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We present the first group of acoustic delay lines (ADLs) at 5 GHz, using the first-order antisymmetric (A1) mode in Z-cut lithium niobate thin films. The demonstrated ADLs significantly surpass the operation frequency of the previous works with similar feature sizes, because of its simultaneously fast phase velocity, large coupling coefficient, and low-loss. In this work, the propagation characteristics of the A1 mode in lithium niobate is analytically modeled and validated with finite element analysis. The design space of A1 ADLs is then investigated, including both the fundamental design parameters and those introduced from the practical implementation. The implemented ADLs at 5 GHz show a minimum insertion loss of 7.9 dB, an average IL of 9.1 dB, and a fractional bandwidth around 4%, with delays ranging between 15 ns to 109 ns and the center frequencies between 4.5 GHz and 5.25 GHz. The propagation characteristics of A1 mode acoustic waves have also been extracted for the first time. The A1 ADL platform can potentially enable wide-band high-frequency passive signal processing functions for future 5G applications in the sub-6 GHz spectrum bands.

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Section: B A1 Mode In Lithium Niobate Thin Filmmentioning

confidence: 99%

5-GHz Antisymmetric Mode Acoustic Delay Lines in Lithium Niobate Thin Film

Yang

et al. 2020

IEEE Trans. Microwave Theory Techn.

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“…2(b). From the commercially available substrates, we choose the cross section along the X-axis in 128 platform, which has a significant K 2 15 of 91.1%, higher than prior works using other orientations [17], [37].…”

Section: B A1 Acoustic Platform Selection and Analysismentioning

confidence: 99%

“…The estimated footprint for such a 50-transversal filter is 0.0226 mm 2 . When compared with resonator-based filters above 4 GHz, the A1 SPUDT ADL prototype has narrower FBW (8.1% in [15], 10% in [17], 12% in [18]), slightly worse IL (1.8 dB in [15], 1.7 dB in [17], around 1.8 dB in [18]), but significantly smaller footprint (0.557 mm 2 in [15], 0.36 mm 2 in [17], around 1 mm 2 in [18]). Such results mark the first step toward ADL-based transversal filters for sub-6-GHz 5G applications.…”

Section: A A1 Spudt Adl Baseline Designmentioning

confidence: 99%

“…These devices have remarkable electromechanical coupling (K 2 > 30%), low damping, and high operating frequencies. Their reported ladder filters show a fractional bandwidth (FBW) as high as 10% around 5 GHz [17], [18], meeting the challenging FBW requirements for several 5G bands [5]. Despite the record-breaking performance of these filter solutions, two drawbacks currently exist for designing filters for other frequency bands with smaller FBW, such as the proposed Wi-Fi six bands at 6 GHz (2.6% FBW) [4] and the 4.8-GHz 5G band in Asia (2.1% FBW) [5].…”

Section: Introductionmentioning

confidence: 99%

“…First, the footprints of the A1 resonator-based filters are large, which is caused by the small capacitance per unit area in A1 resonators. Such a drawback worsens when in-band spurious mode suppression approaches are used [17]. Second, narrowband filters underutilize k 2 of A1 in LiNbO 3 and require complex topologies for low IL and shape factors [20].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Low-Loss 5-GHz First-Order Antisymmetric Mode Acoustic Delay Lines in Thin-Film Lithium Niobate

Yang

Link

et al. 2021

IEEE Trans. Microwave Theory Techn.

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In this work, we present the low-loss acoustic delay lines (ADLs) at 5 GHz, using the first-order antisymmetric (A1) mode in 128 • Y-cut lithium niobate thin films. The ADLs use a single-phase unidirectional transducer (SPUDT) design with a feature size of quarter acoustic wavelength. The design space is analytically explored and experimentally validated. The fabricated miniature A1 ADLs with a feature size of 0.45 µm show a high operating frequency at 5.4 GHz, a minimum insertion loss (IL) of 3 dB, a fractional bandwidth (FBW) of 1.6%, and a small footprint of 0.0074 mm 2. The low IL and high operating frequency have significantly surpassed the state-of-theart performance of ADLs. The propagation characteristics of A1 acoustic waves have also been extracted. The demonstrated designs can lead to low-loss and high-frequency transversal filters for future 5G applications in the sub-6-GHz bands.

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Lithium niobate/lithium tantalate single-crystal thin films for post-moore era chip applications

Zhu,

Wan

2024

Moore. More

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Lithium niobate (LiNbO3) and lithium tantalate (LiTaO3) are a class of multifunctional materials with excellent piezoelectric/ferroelectric, electro-optic, and nonlinear optical properties, which have wide applications in high-performance radio frequency filters, optical communications, integrated photonics, quantum information, and other fields. With the advent of the post-Moore era of integrated circuit technology, LiNbO3/LiTaO3 thin-film also shows great potential and advantages in new concept chip applications. High-quality single-crystal thin films lay the foundation for high-performance radio frequency, optoelectronic, and quantum devices and their integration. This review first introduces the main characteristics of LiNbO3/LiTaO3 single-crystal thin films, such as ferroelectricity, piezoelectricity, electro-optic effect and nonlinear optical effect, then introduces the preparation methods of LiNbO3/LiTaO3 single-crystal thin films represented by smart-cut and their application progress in different fields such as waveguides, modulators, laterally excited bulk acoustic wave resonators, and quantum devices. The application prospects and challenges of LiNbO3/LiTaO3 single-crystal thin films in post-Moore era chips are also discussed in this article, aiming to provide valuable references for their development and application.

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4.5 GHz Lithium Niobate MEMS Filters With 10% Fractional Bandwidth for 5G Front-Ends

Cited by 91 publications

References 9 publications

5-GHz Antisymmetric Mode Acoustic Delay Lines in Lithium Niobate Thin Film

5-GHz Antisymmetric Mode Acoustic Delay Lines in Lithium Niobate Thin Film

Low-Loss 5-GHz First-Order Antisymmetric Mode Acoustic Delay Lines in Thin-Film Lithium Niobate

Lithium niobate/lithium tantalate single-crystal thin films for post-moore era chip applications

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