Low-Loss 5-GHz First-Order Antisymmetric Mode Acoustic Delay Lines in Thin-Film Lithium Niobate

Lu, Ruochen; Yang, Yansong; Link, Steffen; Gong, Songbin

doi:10.1109/tmtt.2020.3022942

Cited by 21 publications

(11 citation statements)

References 42 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The current SPUDT design requires a /8 feature size, limiting the frequency scalability and power handling of ADLs. Future studies are needed to implement high-frequency SPUDTs with no less than /4 feature sizes [5], [6], to explore the full potential of the LiNbO 3 -sapphire stack.…”

Section: F Discussionmentioning

confidence: 99%

See 1 more Smart Citation

Gigahertz Low-Loss and High Power Handling Acoustic Delay Lines Using Thin-Film Lithium-Niobate-on-Sapphire

Yang

Hassanien

et al. 2021

IEEE Trans. Microwave Theory Techn.

Self Cite

View full text Add to dashboard Cite

In this work, we present the first group of gigahertz low-loss, wideband, and high power handling delay lines (ADLs) using a thin-film lithium niobate (LiNbO 3 )-on-sapphire platform. The ADLs leverage a single-phase unidirectional transducer (SPUDT) to efficiently excite the shear horizontal surface acoustic wave (SH-SAW) in the film stack. The fabricated miniature SH-SAW ADL at 1.1 GHz shows a low insertion loss (IL) of 2.8 dB, a wide fractional bandwidth (FBW) of 6.14%, and a fast phase velocity of 5127 m/s. The device also features a high 1-dB compression point (P1dB) of 30.4 dBm. The temperature coefficient of frequency is −45 ppm/K. ADLs with delays between 12 and 172 ns have been implemented, with IL between 2.8 and 8.3 dB. SH-SAW propagation characteristics are extracted, showing a group velocity of 4747 m/s and a propagation loss of 6.73 dB/mm or 31.9 dB/µs. The simultaneous low-loss and high power handling illustrate the great potential of LiNbO 3 -on-sapphire for RF and cross domain applications at gigahertz.

show abstract

Section: F Discussionmentioning

confidence: 99%

“…For more information, see https://creativecommons.org/licenses/by/4.0/ coefficient of frequency (TCF), and power handling. The new LiNbO 3 -on-sapphire acoustic platform is the major differentiator and performance enhancement enabler from our previous works on freestanding suspended LiNbO 3 thin films [6], [13], [17], [20], [21], [23], [40].…”

mentioning

confidence: 99%

Gigahertz Low-Loss and High Power Handling Acoustic Delay Lines Using Thin-Film Lithium-Niobate-on-Sapphire

Yang

Hassanien

et al. 2021

IEEE Trans. Microwave Theory Techn.

Self Cite

View full text Add to dashboard Cite

show abstract

“…One can directly extract acoustic propagation loss [86] with the identical transducer design but different waveguide lengths [87]. Low-loss and wideband ADLs at GHz have been built using S0 in AlN thin films [82], S0 [87], SH0 [88], A1 [89], and higher-order Lamb waves [90] in LN thin-films, and SH-SAW in solidly mounted LN thin-films [91], [92]. The propagation loss reported for GHz acoustic waves in LN is around 0.005 dB/λ and 0.03 dB/λ [90], and S0 shows the lowest loss.…”

Section: Enhancing Quality Factors and Reducing Lossmentioning

confidence: 99%

Microwave Acoustic Devices: Recent Advances and Outlook

Gong

Yang

et al. 2021

IEEE J. Microw.

Self Cite

View full text Add to dashboard Cite

This paper presents a short review of the microwave acoustics area, where exciting material innovations and performance advancements have been made in the past decade. The ever-growing demand for more sophisticated passive signal processing functions on-chip has fueled these developments. As a result, microwave acoustic devices have maintained performance leadership in mobile applications. By evaluating three fundamental parameters, namely electromechanical coupling (k 2 ), quality factors, and frequency scalability, of microwave acoustics, this paper aims to, extensively but not exhaustively, capture the rationales behind approaches achieving higher performance microsystems. Outlooks for different material systems and addressing their underlying challenges are also offered in hopes of establishing a balanced roadmap for future microwave acoustics development.

show abstract

“…Coupling coefficient K 2 , k t 2 and R-a-R frequency separation: The coupling coefficients in these formulas require additional comments. In the literature, there are many different definitions of the piezo-coupling and different values for the coupling in thin LN membranes, for example, 20% in [3], 25% in [2] and even 91% in [16].…”

Section: Fig 1 (A) Transversely and (B) Laterally Excited Membrane Resonators (C) Studied Geometry Of Main Piezoelectric Layer With Two Dmentioning

confidence: 99%

A formula for the admittance of laterally excited bulk wave resonators (XBARs)

Plessky

Kucuk

Yandrapalli

et al. 2021

Electronics Letters

View full text Add to dashboard Cite

The recently invented laterally excited bulk wave resonators (XBARs) demonstrate outstanding parameters suitable for the design of low loss filters for the fifth generation of mobile phones. The operation of XBARs can be interpreted as an excitation of anti‐symmetric Lamb mode A1 by the interdigital transducer. However, it can also be seen as the generation of fundamental plate resonances in a set of parallelly connected quasi‐independent resonators, excited by a lateral electric field created by narrow electrodes with alternating polarity. By exploiting this latter interpretation, we propose a formula for the admittance of multi‐layered membranes, including the main piezoelectric layer of suitable orientation and different additional dielectric layers on both sides of the membranes. The structure can be asymmetric and the excitation of all shear wave thickness resonances, not only with odd numbers, is described. The formula can be used for the one‐dimensional modelling and optimisation of XBARs and the estimation of the resonance frequency dependence on the deposited trimming thin layers.

show abstract

Low-Loss 5-GHz First-Order Antisymmetric Mode Acoustic Delay Lines in Thin-Film Lithium Niobate

Cited by 21 publications

References 42 publications

Gigahertz Low-Loss and High Power Handling Acoustic Delay Lines Using Thin-Film Lithium-Niobate-on-Sapphire

Gigahertz Low-Loss and High Power Handling Acoustic Delay Lines Using Thin-Film Lithium-Niobate-on-Sapphire

Microwave Acoustic Devices: Recent Advances and Outlook

A formula for the admittance of laterally excited bulk wave resonators (XBARs)

Contact Info

Product

Resources

About