Minor structural changes in transition metal dichalcogenides can have dramatic effects on their electronic properties. This makes the quest for key parameters that enable a selective choice between the competing metallic and semiconducting phases in the 2D MoTe 2 system compelling. Herein, we report the optimal conditions at which the choice of the initial seed layer dictates the type of crystal structure of atomically-thin MoTe 2 films grown by chemical vapour deposition (CVD). When Mo metal is used as a seed layer, semiconducting 2H-MoTe 2 is the only product. Conversely, MoO 3 leads to the preferential growth of metallic 1T′-MoTe 2. The control over phase growth allows for simultaneous deposition of both 2H-MoTe 2 and 1T′-MoTe 2 phases on a single substrate during one CVD reaction. Furthermore, Rhodamine 6G dye can be detected using few-layered 1T′-MoTe 2 films down to 5 nM concentration, demonstrating surface enhanced Raman spectroscopy (SERS) with sensitivity several orders of magnitude higher than for bulk 1T′-MoTe 2 .
Molecular metal chalcogenides have attracted great attention as electrocatalysts for the hydrogen evolution reaction (HER). However, efficient utilisation of the active sites and catalytic performance modulation has been challenging. Here...
Minor structural changes in transition metal dichalcogenides can have dramatic effects on their electronic properties. This makes the quest for key parameters that can enable a selective choice between the competing metallic and semiconducting phases in the 2D MoTe<sub>2</sub> system compelling. Herein, we report the optimal conditions at which the choice of the initial seed layer dictates the type of crystal structure of atomically-thin MoTe<sub>2</sub> films grown by chemical vapour deposition (CVD). When Mo metal is used as a seed layer, phase-pure semiconducting 2H-MoTe<sub>2</sub> is the only product. Conversely, MoO<sub>3</sub> leads to the preferential growth of phase-pure metallic 1Tꞌ-MoTe<sub>2</sub>. The control over phase growth allows for simultaneous deposition of both 2H-MoTe<sub>2</sub> and 1Tꞌ-MoTe<sub>2</sub> phases on a single substrate during one CVD reaction. Furthermore, Rhodamine 6G dye can be detected using few-layered 1Tꞌ-MoTe<sub>2</sub> films down to 5 nM concentration which is several orders of magnitude higher than the value observed for bulk 1Tꞌ-MoTe<sub>2</sub>.
Minor structural changes in transition metal dichalcogenides can have dramatic effects on their electronic properties. This makes the quest for key parameters that can enable a selective choice between the competing metallic and semiconducting phases in the 2D MoTe<sub>2</sub> system compelling. Herein, we report the optimal conditions at which the choice of the initial seed layer dictates the type of crystal structure of atomically-thin MoTe<sub>2</sub> films grown by chemical vapour deposition (CVD). When Mo metal is used as a seed layer, phase-pure semiconducting 2H-MoTe<sub>2</sub> is the only product. Conversely, MoO<sub>3</sub> leads to the preferential growth of phase-pure metallic 1Tꞌ-MoTe<sub>2</sub>. The control over phase growth allows for simultaneous deposition of both 2H-MoTe<sub>2</sub> and 1Tꞌ-MoTe<sub>2</sub> phases on a single substrate during one CVD reaction. Furthermore, Rhodamine 6G dye can be detected using few-layered 1Tꞌ-MoTe<sub>2</sub> films down to 5 nM concentration which is several orders of magnitude higher than the value observed for bulk 1Tꞌ-MoTe<sub>2</sub>.
Minor structural changes in transition metal dichalcogenides can have dramatic effects on their electronic properties. This makes the quest for key parameters that can enable a selective choice between the competing metallic and semiconducting phases in the 2D MoTe<sub>2</sub> system compelling. Herein, we report the optimal conditions at which the choice of the initial seed layer dictates the type of crystal structure of atomically-thin MoTe<sub>2</sub> films grown by chemical vapour deposition (CVD). When Mo metal is used as a seed layer, phase-pure semiconducting 2H-MoTe<sub>2</sub> is the only product. Conversely, MoO<sub>3</sub> leads to the preferential growth of phase-pure metallic 1Tꞌ-MoTe<sub>2</sub>. The control over phase growth allows for simultaneous deposition of both 2H-MoTe<sub>2</sub> and 1Tꞌ-MoTe<sub>2</sub> phases on a single substrate during one CVD reaction. Furthermore, Rhodamine 6G dye can be detected using few-layered 1Tꞌ-MoTe<sub>2</sub> films down to 5 nM concentration which is several orders of magnitude higher than the value observed for bulk 1Tꞌ-MoTe<sub>2</sub>.
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