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Applications of polymeric materials in electrical engineering increasingly require improvements in operating voltages, performance, reliability, and size reduction. However, the resulting increase on the electric field in electrical systems can prevent achieving these goals. Polymer composites, functionalized with conductive or semiconductive particles, can allow us to reduce the electric field, thus grading the field within the system. In this paper, a comprehensive review of field-grading materials, their properties, and recent developments and applications is provided to realize high-performance high-voltage engineering applications.

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A series of three articles presents an innovative way to build advanced functionally graded materials (FGM) based on polymer/ceramic (epoxy/SrTiO3) composites tailored by electrophoresis for field grading in power electronics. In this Part 3, this method is applied in the context of power modules for DBC substrate encapsulation. An evaluation of the FGM performances is reported based on electrostatic simulations and breakdown voltage measurements on encapsulated DBC substrates. The results show a significant mitigation of the electric fringe field at the triple point while breakdown is largely increased by a factor 2 for FGM composites compared to neat epoxy. The process enables to use the electric field reinforcements of HV electrical systems (e.g. tips coming from the design), and thus potential weak points, to locally 'self-heal' them in-situ. Such an electrophoresis process used to build FGM composites paves the way of the next generation of functionalized polymer composites used in high voltage power applications for improving the electrical aging of insulating materials and power system reliability.

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As the available wide bandgap semiconductors continuingly increase their operating voltages, the electrical insulation used in their packaging is increasingly constrained. More precisely the ceramic substrate, used in demanding applications, represents a key multi-functional element is being in charge of the mechanical support of the metallic track that interconnects the semiconductor chips with the rest of the power system, as well as of electrical insulation and of thermal conduction. In this complex assembly, the electric field enhancement at the triple junction between the ceramic, the metallic track borders and the insulating environment is usually a critical point. When the electrical field at the triple point exceeds the critical value allowed by the insulation system, this hampers the device performance and limits the voltage rating for future systems. The solution proposed here is based on the shape modification of the ceramic substrate by creating a mesa structure (plateau) that holds the metallic tracks in the assembly. A numerical simulation approach is used to optimize the structure. After the elaboration of the structures by ultrasonic machining we observed a significant increase (30%) in the partial discharge detection voltages, at 10 pC sensitivity, in a substrate with a mesa structure when comparing to a conventional metallized ceramic substrate.