In this paper, we reported the in situ fabrication of highly luminescent formamidinium lead bromide (FAPbBr) nanocrystal thin films by dropping toluene as an anti-solvent during the spin-coating with a perovskite precursor solution using 3,3-diphenylpropylamine bromide (DPPA-Br) as a ligand. The resulting films are uniform and composed of 5-20 nm FAPbBr perovskite nanocrystals. By monitoring the solvent mixing of anti-solvent and precursor solution on the substrates, we illustrated the difference between the ligand-assisted reprecipitation (LARP) process and the nanocrystal-pinning (NCP) process. This understanding provides a guideline for film optimization, and the optimized films obtained through the in situ LARP process exhibit strong photoluminescence emission at 528 nm, with quantum yields up to 78% and an average photoluminescence lifetime of 12.7 ns. In addition, an exciton binding energy of 57.5 meV was derived from the temperature-dependent photoluminescence measurement. More importantly, we achieved highly efficient pure green perovskite based light-emitting diode (PeLEDs) devices with an average external quantum efficiency (EQE) of 7.3% (maximum EQE is 16.3%) and an average current efficiency (CE) of 29.5 cd A (maximum CE is 66.3 cd A) by adapting a conventional device structure of ITO/PEDOT:PSS/TFB/perovskite film/TPBi/LiF/Al. It is expected that the in situ LARP process provides an effective methodology for the improvement of the performance of PeLEDs.
The quantum dot spectrometer, fabricated by integrating different quantum dots with an image sensor to reconstruct the target spectrum from spectral-coupled measurements, is an emerging and promising hyperspectrometry technology with high resolution and a compact size. The spectral resolution and spectral range of quantum dot spectrometers have been limited by the spectral variety of the available quantum dots and the robustness of algorithmic reconstruction. Moreover, the spectrometer integration of quantum dots also suffers from inherent photoluminescence emission and poor batch-to-batch repeatability. In this work, we developed nonemissive in situ fabricated MA3Bi2X9 and Cs2SnX6 (MA = CH3NH3; X = Cl, Br, I) perovskite-quantum-dot-embedded films (PQDFs) with precisely tunable transmittance spectra for quantum dot spectrometer applications. The resulting PQDFs contain in situ fabricated perovskite nanocrystals with homogenous dispersion in a polymeric matrix, giving them advantageous features such as high transmittance efficiency and good batch-to-batch repeatability. By integrating a filter array of 361 kinds of PQDFs with a silicon-based photodetector array, we successfully demonstrated the construction of a perovskite quantum dot spectrometer combined with a compressive-sensing-based total-variation optimization algorithm. A spectral resolution of ~1.6 nm was achieved in the broadband of 250–1000 nm. The performance of the perovskite quantum dot spectrometer is well beyond that of human eyes in terms of both the spectral range and spectral resolution. This advancement will not only pave the way for using quantum dot spectrometers for practical applications but also significantly impact the development of artificial intelligence products, clinical treatment equipment, scientific instruments, etc.
In this work, the integration of in situ fabricated perovskite quantum dots embedded composite films (PQDCFs) as downshifting materials is first reported for enhancing the ultraviolet (UV) response of silicon (Si) photodetectors toward broadband and solar‐blind light detection. External quantum efficiency measurements show that the UV response of PQDCF coated Si photodiodes greatly improves from near 0% to at most of 50.6% ± 0.5% @ 290 nm. As compared to the calculated maximum value of 87%, the light coupling efficiency of the integrated device is determined to be 80%@395 nm, suggesting an efficient downshifting process. Furthermore, PQDCF is also successfully adapted for electron multiplying charge coupled device (EMCCD) based image sensor. The PQDCF coated EMCCD shows linear response with high‐resolution imaging under illumination at 360, 620, and 960 nm, implying the ability of broadband light detection in the UV, visible (VIS), and near infrared (NIR) region. Furthermore, a solar‐blind UV detection is demonstrated by integrating a solar‐blind UV filter with PQDCF coated EMCCD. In all, the use of PQDCF as luminescent downshifting materials provides an effective and low‐cost way to improve the UV response of Si photodetectors.
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