Perovskite Quantum Dots Embedded Composite Films Enhancing UV Response of Silicon Photodetectors for Broadband and Solar‐Blind Light Detection

Zhang, Mengjiao; Wang, Lingxue; Meng, Linghai; Wu, Xian‐gang; Tan, Qinwen; Chen, Yuanjin; Liang, Wanyu; Jiang, Feng; Cai, Yi; Zhong, Haizheng

doi:10.1002/adom.201800077

Cited by 65 publications

(32 citation statements)

References 34 publications

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“…As a typical example, Zhong et al reported the utilization of perovskite QD (CH 3 NH 3 PbBr 3 )embedded composite films as downshifting materials to enhance the UV response of Si detectors toward obtaining broadband detection. 37 The decoration of perovskite QDs on Si photodiodes greatly boosted the EQE from an initial value of nearly 0% to approximately 50.6% ± 0.5% at 290 nm. In comparison to the peak value of 87%, the light-coupling efficiency of the hybrid device was 80% at 395 nm, indicating a strong downshifting effect that accounted for the enhanced UV photoresponse.…”

Section: Qd/simentioning

confidence: 98%

“…To enhance the detection capacity of Si photodetectors in the UV range, luminescent QDs that transform UV photons into visible light via the downshifting process are suitable materials for integration with Si. As a typical example, Zhong et al reported the utilization of perovskite QD (CH 3 NH 3 PbBr 3 )‐embedded composite films as downshifting materials to enhance the UV response of Si detectors toward obtaining broadband detection . The decoration of perovskite QDs on Si photodiodes greatly boosted the EQE from an initial value of nearly 0% to approximately 50.6% ± 0.5% at 290 nm.…”

Section: D Nanomaterial/si Heterostructurementioning

confidence: 99%

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Low‐dimensional nanomaterial/Si heterostructure‐based photodetectors

Tian

Sun

Chen

et al. 2019

InfoMat

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Due to its excellent electrical and optical features, silicon (Si) is highly attractive for photodetector applications. The design and fabrication of low‐dimensional semiconductor/Si hybrid heterostructures provide a great platform for fabricating high‐performance photodetectors, thereby overcoming the inherent limitations of Si. This review focuses on state‐of‐the‐art Si heterostructure‐based photodetectors. It starts with the introduction of three different device configurations, that is, photoconductors, photodiodes, and phototransistors. Their working mechanisms and relative pros and cons are introduced, and the figures of merit of photodetectors are summarized. Then, we discuss the device physics/design, photodetection performance, and optimization strategies for Si‐based photodetectors. Finally, future challenges in the photodetector applications of Si‐based hybrid heterostructures are discussed.

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Section: Qd/simentioning

confidence: 98%

Section: D Nanomaterial/si Heterostructurementioning

confidence: 99%

Low‐dimensional nanomaterial/Si heterostructure‐based photodetectors

Tian

Sun

Chen

et al. 2019

InfoMat

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“…In addition, their bandgap can be easily tuned through the control of the CQD size, surface chemical modification, or ligand exchange . Their excellent photon‐to‐current conversion properties in the visible and near‐infrared (NIR) enable them to be used in p–n junction photodiodes such as solar cells and photodetectors . CQD‐based solar cells have been developed because of the global requirements of renewable and clean energy.…”

Section: Introductionmentioning

confidence: 99%

Improved Performance of Quantum‐Dot Photodetectors Using Cheap and Environmentally Friendly Polyethylene Glycol

Kang

Park

Jeong

et al. 2018

Adv Materials Inter

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there are many important applications, such as imaging and biomedical sensors, [14,15] X-ray detectors, [16] and optical communications. [17] For p-n junction QPDs, important parameters are the interfacial contact properties at the p-n junction because the internal electric field at the interfaces can decrease the trap site and charge recombination for efficient charge transport in QPDs. [18][19][20] Recently, Wei et al. reported promising photodetecting properties by developing hybrid organic/PbS CQD based QPDs. [21] The CQD layer improved the electron transport and prevented charge recombination in the devices. Thus, the bilayer contact between the bulk-heterojunction conjugated organic layer and the CQD active layer significantly decreased the dark current and improved charge collection. However, no studies were done to improve the charge collection and decrease the dark current in QPDs via modifying the interfacial properties among the CQD layer and the electron accepting layers (EALs).In this study, we have focused on the interfacial properties among CQDs and electron-accepting ZnO layers by introducing organic cathode buffer layers (CBLs) to improve the photodetecting properties of QPDs. ZnO is a well-known n-type semiconductor with high electron mobility and transmittance. [22,23] In particular, its low-temperature solution-processability (<150 °C) is appropriate for roll-to-roll printing technology on flexible substrates. [24,25] However, its relatively high work function of ≈4.3 eV requires further electric dipole layers for improving the charge transporting characteristics of the CQD layers. [26] In addition, the rough surface morphology from its crystalline structure worsens the uniform contact among the CQD and ZnO layers. To reduce the surface roughness and work function of the ZnO layer, we introduced polyethylenimine ethoxylated (PEIE) and polyethylene glycol (PEG) as the CBLs. PEIE has multiple hydroxyl side groups, which effectively generate permanent dipole moments at the interface of ZnO, and is successfully utilized in solar cells applications. [27,28] However, in the case of PEG, even though the ethylene glycol functional groups can coordinate with the ZnO layer, it has seldom been used in electronic applications to modify the EALs. [29] PEG is biologically safe, water soluble, and relatively cheap; thus, the utilization of PEG is environmentally and industrially attractive. Colloidal quantum dot (CQD) photodetectors (PDs) are developed. The on/off current ratio is improved by applying organic cathode buffer layers (CBLs), such as polyethylenimine ethoxylated (PEIE) and polyethylene glycol (PEG). The on-current of CQD-PDs (QPDs) is increased by the decreased work function of ZnO/CBLs via forming a permanent dipole moment at the interface of ZnO andCBLs. The off-current is significantly decreased by the improved interfacial morphology via softening the ZnO surfaces. In the photoconductive mode for the fast response time of a signal, PEG-and PEIE-treated QPDs exhibit improved photodetecting pro...

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“…By coating the PQDCF on a Si photodiodes, response spectra was extended to UV region of 200-400 nm and the EQE was improved from near zero up to 50.6% at 290 nm. [144] Furthermore, the PQDCF can be well adapted for front-illuminated electron multiplying CCD (EMCCD) image sensors without significant resolution and response loss. By mounting solar-blind UV filter in front of the lens, we further demonstrated prototype solar-blind UV image sensor.…”

Section: Enhanced Uv Response Of Silicon Photodetectorsmentioning

confidence: 99%

In Situ Fabricated Perovskite Nanocrystals: A Revolution in Optical Materials

Chang

Bai

Zhong

2018

Advanced Optical Materials

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188

127

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in bulk halide perovskites, long carrier diffusion length, and an absorption range covering the visible solar spectrum, collectively enable the high performance of photo electricity conversion. Compared to the bulk materials, perovskite nanocrystals or quantum dots (usually denoted as PNCs or PQDs) show obvious excitonic features with enhanced photoluminescence (PL) properties due to the well-known size-dependent quantum confinement effects. [14][15][16][17] The combination of color saturated emissions, super high quantum yield (QY), as well as easy processing inspired the intensive exploration of PNCs as light emitters, which is now under spotlights in the field of optical materials.The first perspective aim of PNCs is to alternate the state-of-the-art CdSe or InP quantum dots (QDs) as new generation luminescence materials. [18,19] As shown in Figure 1, these QD materials have been well demonstrated to be potential functional components for photonic and optoelectronic applications, and are currently on the way to industrialization. [20][21][22][23] Specifically, QDs can be employed as fluorescence labels, [24] laser gain media, [25] LED phosphors, [26] and down-shifting films for LCD backlights. [27,28] They can also be processed into thin film for optoelectronic devices including solar cells, [29] photodetectors, [30,31] transistors [32] and LEDs. [33] The PNCs outcompete these conventional QDs in terms of narrower full width at half maximum (FWHM) and low fabrication cost, but most importantly, the ease of in situ preparation. [34,35] Herein, this progress report highlight the developments of in situ fabricated PNCs.Colloidal semiconductor QDs are typically synthesized ex situ in flasks by hot injection method, stabilized by surface ligands. [36][37][38][39] To incorporate such solution based materials into applications usually requires purification, redispersion and surface engineering. For instance, ligand exchange is often employed to disperse QDs into aimed solvent, inducing defects that inevitably derogating the PLQYs. [40] Moreover, the organic ligands themselves also suffer from the risk of disabsorbing, reducing the stability of the QDs and thus the final devices. [41] Because halide perovskite are ionic compounds that can be well dissolved into polar solvents, PNCs can be fabricated through either ex situ routes in flask or in situ strategies on substrates. The in situ fabricated PNCs are adaptable to devices integration due to their scalable and low-cost manufacturing. In this regard, more and more efforts have been made in terms of the controlling synthesis, physical properties and device applications of PNC materials.After over 30 years of development, colloidal quantum dots have now become mature luminescent materials in photonic and optoelectronic operations and start to hit the market. The emerging perovskite nanocrystals are expected to promote large-scale commercialization due to their superior optical properties as well as low cost and easy fabrication. This progress report is focused on the...

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Perovskite Quantum Dots Embedded Composite Films Enhancing UV Response of Silicon Photodetectors for Broadband and Solar‐Blind Light Detection

Cited by 65 publications

References 34 publications

Low‐dimensional nanomaterial/Si heterostructure‐based photodetectors

Low‐dimensional nanomaterial/Si heterostructure‐based photodetectors

Improved Performance of Quantum‐Dot Photodetectors Using Cheap and Environmentally Friendly Polyethylene Glycol

In Situ Fabricated Perovskite Nanocrystals: A Revolution in Optical Materials

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