Bismuth telluride‐based materials are already being commercially developed for thermoelectric (TE) cooling devices and power generators. However, the relatively low efficiency, which is characterized by a TE figure of merit, zT, is the main obstacle to more widespread application. Significant advances in the TE performance have been made through boundary engineering via embedding nanoinclusions or nanoscale grains. Herein, an effective approach to greatly enhance the TE performance of p‐type BiSbTe material by incorporating carbon microfibers is reported. A high zT of 1.4 at 375 K and high average zT of 1.25 for temperatures in the range of 300 to 500 K is achieved in the BiSbTe/carbon microfiber (BST/CF) composite materials. Their superior TE performance originates from the low thermal conductivity and the relatively high power factor. A TE unicouple device based on the p‐type BST/CF composite material and the commercially available n‐type bismuth telluride‐based material shows a huge cooling temperature drop in the operating temperature range of 299–375 K, and is greatly superior to the unicouple device made of both commercial p‐type and n‐type bismuth telluride‐based material. The materials demonstrate a high average zT and excellent mechanical properties and are strong candidates for practical applications.

trical conductivity, S is Seebeck coefficient, T is the absolute temperature, and κ is the thermal conductivity (κ = electronic (κ e) + lattice thermal conductivity (κ L)). [2,3] The state-of-the-art bismuth telluride-based thermoelectric (TE) materials have been used for refrigeration applications. [4] However, their ZT is limited to about 1 at room temperature, making such cooling devices less powerful and cost-competitive than other conventional technologies such as mechanical vapor-compression cooling systems. Further improving the ZT would facilitate their widespread application in industrial waste heat harvesting and electronic device cooling. [5] Maximizing ZT requires the enhancement of the power factor (PF = S 2 σ) and the reduction of thermal conductivity. [6,7] Several approaches have recently been implemented to enhance ZT, including improvement of PF by optimizing carrier concentration, [8-10] band convergence, [11,12] resonant levels, [13] energy barrier filtering, [14] and reducing κ L by alloying, [15] all-scale hierarchical architectures [16-18] and nanostructuring. [19-21] In particular, reduction of κ L by nanostructuring or through formation of nanocomposites has been demonstrated to be an effective Based on the Seebeck and Peltier effects, state-of-the-art bismuth telluridebased thermoelectric materials, which are capable of direct and reversible conversion of thermal to electrical energy, have great potential in energy harvesting and solid-state refrigerators. However, their widespread use is limited by their low conversion efficiency, which is determined by the dimensionless figure-of-merit (ZT). Significant enhancement of ZT is a great challenge owing to the common interdependence of electrical and thermal conductivity. Here, it is demonstrated that by incorporating nanoamorphous boron into the p-type Bi 0.5 Sb 1.5 Te 3 , a record high ZT of 1.6 at 375 K is achieved. It is shown that a high density of nanostructures and dislocations due to the incorporation of the boron inclusions, leads to a significant reduction of thermal conductivity and improved charge transport. The findings represent an important step to further promote the development of thermoelectric technology and its widespread application in solid-state refrigeration and power generation from waste heat.

We have carried out a detailed investigation of the magnetism, valence state, and magnetotransport in VSe bulk single crystals, as well as in laminates obtained by mechanical exfoliation. In sharp contrast to the ferromagnetic behavior reported previously, here, no ferromagnetism could be detected for VSe single crystal and laminate from room temperature down to 2 K. Neither did we find the Curie paramagnetism expected due to the 3d odd-electronic configuration of covalent V ions. Rather, intrinsic VSe is a non-magnetic alloy without local moment. Only a weak paramagnetic contribution introduced by defects is noticeable below 50 K. A weak localization effect due to defects was also observed in VSe single crystals for the first time.

Spin gapless semiconductors (SGSs) are a new class of zero gap materials which have a fully spin polarised electrons and holes. They bridge zero gap materials and half-metals. The band structures of the SGSs can have two types of energy dispersions: Dirac linear dispersion and parabolic dispersion. The Dirac type SGSs exhibit fully spin polarized Dirac cones, and offer a platform for massless and fully spin polarized spintronics as well as dissipationless edge state via quantum anomalous Hall effect. Due to its fascinating spin and charge states, they hold great potential application in spintronics. There have been tremendous efforts worldwide on searching for suitable candidates of SGSs. In particularly, there is an increasing interest in searching for Dirac type SGSs. In the past decade, a large number of Dirac or parabolic type SGSs have been predicted by density functional theory and some of parabolic SGSs have been experimentally demonstrated. The SGSs hold great potential for high speed and low-energy consumption spintronics, electronics and optoelectronics. Here, we review both Dirac and parabolic types of SGSs in different materials systems and outline the concepts of SGSs, novel spin and charge states, and potential applications of SGSs in next generation spintronic devices.

Thermoelectric (TE) materials have attracted extensive interest because of their ability to achieve direct heat-to-electricity conversion. They provide an appealing renewable energy source in a variety of applications by harvesting waste heat. The record-breaking figure of merit reported for single crystal SnSe has stimulated related research on its polycrystalline counterpart. Boosting the TE conversion efficiency requires increases in the power factor and decreases in thermal conductivity. It is still a big challenge, however, to optimize these parameters independently because of their complex interrelationships. Herein, we propose an innovative approach to decouple electrical and thermal transport by incorporating carbon fiber (CF) into polycrystalline SnSe. We show that the incorporation of highly conductive CF can successfully enhance the electrical conductivity, while greatly reducing the thermal conductivity of polycrystalline SnSe. As a result, a high TE figure-of-merit (zT) of 1.3 at 823 K is obtained in p-type SnSe/CF composite polycrystalline materials. Furthermore, SnSe samples incorporated with CFs exhibit superior mechanical properties, which are favorable for device fabrication applications. Our results indicate that the dispersion of CF can be a good way to greatly improve both TE and mechanical performance.

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The investigations into the interfaces in iron selenide (FeSe) thin films on various substrates have manifested the great potential of showing high-temperature-superconductivity in this unique system. In present work, we obtain FeSe thin films with a series of thicknesses on calcium fluoride (CaF) (100) substrates and glean the detailed information from the FeSe/CaF interface by using scanning transmission electron microscopy (STEM). Intriguingly, we have found the universal existence of a calcium selenide (CaSe) interlayer with a thickness of approximate 3 nm between FeSe and CaF in all the samples, which is irrelevant to the thickness of FeSe layers. A slight Se deficiency occurs in the FeSe layer due to the formation of CaSe interlayer. This Se deficiency is generally negligible except for the case of the ultrathin FeSe film (8 nm in thickness), in which the stoichiometric deviation from FeSe is big enough to suppress the superconductivity. Meanwhile, in the overly thick FeSe layer (160 nm in thickness), vast precipitates are found and recognized as Fe-rich phases, which brings about degradation in superconductivity. Consequently, the thickness dependence of superconducting transition temperature (T) of FeSe thin films is investigated and one of our atmosphere-stable FeSe thin film (127 nm) possesses the highest T/T as 15.1 K/13.4 K on record to date in the class of FeSe thin film with practical thickness. Our results provide a new perspective for exploring the mechanism of superconductivity in FeSe thin film via high-resolution STEM. Moreover, approaches that might improve the quality of FeSe/CaF interfaces are also proposed for further enhancing the superconducting performance in this system.

We report crystal growth and below 2.5K superconductivity of Nb 0.25 Bi 2 Se 3 . These crystals are grown by self flux method. The X-ray diffraction (XRD) pattern of as grown crystal flake shows (00l) plane (c-orientation) growth. The Rietveld refinement of crushed crystal powder XRD (PXRD) pattern confirms the phase purity of the studied sample having R-3m space group of rhombohedral crystalline structure. The Raman spectrum of the studied Nb 0.25 Bi 2 Se 3 crystal distinctly shows three well defined vibrational modes in terms of A 1 1g , Eg 2 , A 2 1g at around 72, 129 and 173cm -1 , which are slightly shifted in comparison to pure Bi 2 Se 3 . Magnetization studies in terms of field cooled (FC) and Zero field cooled (ZFC) magnetic susceptibility measurements show the diamagnetic transition (T c onset ) of the compound at around 2.5K and near saturation of the same below around 2.1K. The isothernal magnetization (MH) being taken at 2K, revealed the lower critical field (H c1 ) of around 50Oe and the upper critical field (H c2 ) of 900Oe. It is clear the studied Nb 0.25 Bi 2 Se 3 is a bulk superconductor. The superconducting critical parameters thus calculated viz. the coherence length, upper and lower critical fields and superconducting transition temperature for as grown Nb 0.25 Bi 2 Se 3 single crystal are reported here.