We report a controllable wet method for effective decoration of 2-dimensional (2D) molybdenum disulfide (MoS2) layers with Au nanoparticles (NPs). Au NPs can be selectively formed on the edge sites or defective sites of MoS2 layers. The Au-MoS2 nano-composites are formed by non-covalent bond. The size distribution, morphology and density of the metal nanoparticles can be tuned by changing the defect density in MoS2 layers. Field effect transistors were directly fabricated by placing ion gel gate dielectrics on Au-decorated MoS2 layers without the need to transfer these MoS2 layers to SiO2/Si substrates for bottom gate devices. The ion gel method allows probing the intrinsic electrical properties of the as-grown and Au-decorated MoS2 layers. This study shows that Au NPs impose remarkable p-doping effects to the MoS2 transistors without degrading their electrical characteristics.
Manipulating particle size is a powerful means of creating unprecedented optical properties in metals and semiconductors. Here we report an insulator system composed of NaYbF4:Tm in which size effect can be harnessed to enhance multiphoton upconversion. Our mechanistic investigations suggest that the phenomenon stems from spatial confinement of energy migration in nanosized structures. We show that confining energy migration constitutes a general and versatile strategy to manipulating multiphoton upconversion, demonstrating an efficient five-photon upconversion emission of Tm3+ in a stoichiometric Yb lattice without suffering from concentration quenching. The high emission intensity is unambiguously substantiated by realizing room-temperature lasing emission at around 311 nm after 980-nm pumping, recording an optical gain two orders of magnitude larger than that of a conventional Yb/Tm-based system operating at 650 nm. Our findings thus highlight the viability of realizing diode-pumped lasing in deep ultraviolet regime for various practical applications.
Over the past years, broadband achromatic metalenses have been intensively studied due to their great potential for applications in consumer and industry products. Even though significant progress has been made, the efficiency of technologically relevant silicon metalenses is limited by the intrinsic material loss above the bandgap. In turn, the recently proposed achromatic metalens utilizing transparent, high-index materials such as titanium dioxide has been restricted by the small thickness and showed relatively low focusing efficiency at longer wavelengths. Consequently, metalens-based optical imaging in the biological transparency window has so far been severely limited. Herein, we experimentally demonstrate a polarization-insensitive, broadband titanium dioxide achromatic metalens for applications in the near-infrared biological imaging. A large-scale fabrication technology has been developed to produce titanium dioxide nanopillars with record-high aspect ratios featuring pillar heights of 1.5 µm and ~90° vertical sidewalls. The demonstrated metalens exhibits dramatically increased group delay range, and the spectral range of achromatism is substantially extended to the wavelength range of 650–1000 nm with an average efficiency of 77.1%–88.5% and a numerical aperture of 0.24–0.1. This research paves a solid step towards practical applications of flat photonics.
The applications of lanthanide-doped upconversion nanomaterials are limited by unsatisfactory brightness currently. Herein, a general strategy is proposed for boosting the upconversion efficiency in Er 3+ ions, based on combined use of a core−shell nanostructured host and an integrated optical waveguide circuit excitation platform. A NaErF 4 @NaYF 4 core−shell nanoparticle is constructed to host the upconversion process for minimizing non-radiative dissipation of excitation energy by surface quenchers. Furthermore, an integrated optical microring resonator is designed to promote absorption of excitation light by the nanoparticles, which alleviates quenching of excited states due to cross-relaxation and phonon-assisted energy transfer. As a result, multiphoton upconversion emission with a large anti-Stokes shift (greater than 1150 nm) and a high energy conversion efficiency (over 5.0%) is achieved under excitation at 1550 nm. These advances in controlling photon upconversion offer exciting opportunities for important photonics applications.
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