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Anisotropic carrier transport properties of unintentionally doped InAs/InAs0.65Sb0.35 type-II strain-balanced superlattice material are evaluated using temperature- and field-dependent magnetotransport measurements performed in the vertical direction on a substrate-removed metal-semiconductor-metal device structure. To best isolate the measured transport to the superlattice, device fabrication entails flip-chip bonding and backside device processing to remove the substrate material and deposit contact metal directly to the bottom of an etched mesa. High-resolution mobility spectrum analysis is used to calculate the conductance contribution and corrected mixed vertical-lateral mobility of the two carrier species present. Combining the latter with lateral mobility results from in-plane magnetotransport measurements on identical superlattice material allows for the calculation of the true vertical majority electron and minority hole mobilities; amplitudes of 4.7 ×103 cm2/V s and 1.60 cm2/V s are determined at 77 K, respectively. The temperature-dependent results show that vertical hole mobility rapidly decreases with decreasing temperature due to trap-induced localization and then hopping transport, whereas vertical electron mobility appears phonon scattering-limited at high temperature, giving way to interface roughness scattering at low temperatures, analogous to the lateral electron mobility but with a lower overall magnitude.

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The minority carrier diffusion length was directly measured by the variable-temperature Electron Beam-Induced Current technique in InAs/GaSb type-II strain-layer-superlattice infrared-detector structures. The Molecular Beam Epitaxy-grown midwave infrared superlattices comprised 10 monolayers of InAs and 10 monolayers of GaSb to give a total absorber thickness of 4 lm. The diffusion length of minority electrons in the p-type absorber region of the p-type/barrier/n-type structure was found to increase from 1.08 to 2.24 lm with a thermal activation energy of 13.1 meV for temperatures ranging from 77 to 273 K. These lengths significantly exceed the individual 10-monolayer thicknesses of the InAs and GaSb, possibly indicating a low impact of interface scattering on the minority carrier diffusion length. The corresponding minority electron mobility varied from 48 to 65 cm 2 /V s. An absorbed gamma irradiation dose of 500 Gy halved the minority carrier diffusion length and increased the thermal activation energy to 18.6 meV, due to creation of radiation-induced defect recombination centers.

High energy proton irradiation produces long-lived p-type doping in GaN and Ga2O3.

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