Carrier concentration and transport in Be-doped InAsSb for infrared sensing applications

Casias, Lilian K.; Morath, Christian P.; Steenbergen, Elizabeth H.; Webster, Preston T.; Balakrishnan, Ganesh; Kim, Jin; Cowan, Vincent M.; Krishna, Sanjay

doi:10.1117/12.2305431

Cited by 3 publications

(5 citation statements)

References 25 publications

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“…Fortunately, it is not the case for T < 30 K and T > 200 K, therefore in the following we concentrate on the results obtained at low (region I) and high (region IV) temperatures. Judging from the partial concentrations and mobilities, H1 spectrum is associated with heavy holes, whereas H2 peaks originate from the presence of light holes, in agreement with the recent results of Casias et al [28] for very similar 2-µm-thick InAs0.91Sb0.09 layer, acceptor doped at 3 × 10 18 cm -3 obtained at T = 300 K. However, it is not clear what is the origin of the strong splitting of heavy hole spectra, observed at low temperatures, which gradually disappears when peaks broaden and start to overlap.…”

Section: Resultssupporting

confidence: 91%

“…Namely, Ea = -14 meV in the first layer and Ea = -8 meV in the second one, counted from the top of the heavy hole band. These values are different from the literature data of Ea ≈ 20 meV [28]. However it is well known that as the dopant concentration increases, the dopants start to interact and form an impurity band [33][34][35].…”

Section: Model and Comparison With Experimentscontrasting

confidence: 77%

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Locally‐Strain‐Induced Heavy‐Hole‐Band Splitting Observed in Mobility Spectrum of p‐Type InAs Grown on GaAs

Wróbel

Umana‐Membreno

Boguski

et al. 2020

Physica Rapid Research Ltrs

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High‐quality Be‐doped InAs layer grown by molecular beam epitaxy on GaAs substrate has been examined via magnetotransport measurements and high‐resolution quantitative mobility spectrum analysis (HR‐QMSA) in the range of 5–300 K and up to 15 T magnetic field. The results show four‐channel conductivity and essential splitting of the most populated hole‐like channel below 55 K. It is concluded that origin of such effect results from the locally strain‐induced interlayer, which direct observation is difficult or impossible via alternative techniques. Based on the magnetotransport data analysis, the multilayer model is proposed, which is implemented into nextnano simulation, giving the proof of the argumentation correctness. These results indicate potential usefulness of HR‐QMSA technique even in the degeneration statistic regime.

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Section: Resultssupporting

confidence: 91%

Section: Model and Comparison With Experimentscontrasting

confidence: 77%

Locally‐Strain‐Induced Heavy‐Hole‐Band Splitting Observed in Mobility Spectrum of p‐Type InAs Grown on GaAs

Wróbel

Umana‐Membreno

Boguski

et al. 2020

Physica Rapid Research Ltrs

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show abstract

“…Moreover, it has been well known from the beginning of the 1970s [ 69 , 70 ] that narrow gap III–V semiconductors, especially InAs, creates surface electron accumulation layers. For example, Figure 11 presents band edges of p-type InAs [ 69 ] and InAsSb [ 71 ] with surface electron accumulation. There is strong electron accumulation on the InAsSb side of InAsSb/GaSb heterojunction due to the staggered type II band alignment.…”

Section: Inassb Alloy Propertiesmentioning

confidence: 99%

“…A popular two-layer model has been often used to separate the surface accumulation and epilayer properties. Another approach is applied in the case of more complicated structures like that shown in Figure 11 b. Mobility spectrum analysis and/or variable temperature and magnetic field-dependent transport analysis with multicarrier fitting models have been applied to segregate the epilayer and surface and interface layer characteristics [ 71 ].…”

Section: Inassb Alloy Propertiesmentioning

confidence: 99%

InAsSb-Based Infrared Photodetectors: Thirty Years Later On

Rogalski

Martyniuk

Kopytko

et al. 2020

Sensors

Self Cite

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In 1989, one author of this paper (A.R.) published the very first review paper on InAsSb infrared detectors. During the last thirty years, many scientific breakthroughs and technological advances for InAsSb-based photodetectors have been made. Progress in advanced epitaxial methods contributed considerably to the InAsSb improvement. Current efforts are directed towards the photodetector’s cut-off wavelength extension beyond lattice-available and lattice-strained binary substrates. It is suspected that further improvement of metamorphic buffers for epitaxial layers will lead to lower-cost InAsSb-based focal plane arrays on large-area alternative substrates like GaAs and silicon. Most photodetector reports in the last decade are devoted to the heterostructure and barrier architectures operating in high operating temperature conditions. In the paper, at first InAsSb growth methods are briefly described. Next, the fundamental material properties are reviewed, stressing electrical and optical aspects limiting the photodetector performance. The last part of the paper highlights new ideas in design of InAsSb-based bulk and superlattice infrared detectors and focal plane arrays. Their performance is compared with the state-of-the-art infrared detector technologies.

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“…Temperature dependent p-doping data from InAs and InAsSb are scarce in general, and to our knowledge, nonexistent for the low-doping regime. Recently Casias et al [9] studied Be-doped InAsSb, but for the GaSb-lattice matched concentration of 9% and at very high dopant concentration levels (~2 × 10 18 cm −3 ).…”

Section: Introductionmentioning

confidence: 99%

P-doping with beryllium of long-wavelength InAsSb

Svensson¹,

Sarney²,

Beck³

et al. 2020

Semicond. Sci. Technol.

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The properties of low concentrations of Be as a p-dopant in InAsSb with a composition corresponding to absorption in the long wavelength infrared band were studied. Temperature- and magnetic field-dependent Hall effect data were analyzed with a multi-carrier model allowing extraction of the bulk hole concentration and mobility. The hole density exhibits a weak freeze-out with an activation energy of 3.2 meV. Density functional theory calculations indicate that Be favor the In sites as BeIn with an acceptor binding energy near the valence band maximum. The hole mobility increases monotonically as the temperature is lowered, showing an alloy scattering-limited value of about 1000 cm2 V−1 s−1 at 77 K and plateauing at around 3200 cm2 V−1 s−1 at 20 K. Temperature-dependent photoluminescence was measured up to 200 K and did not indicate any deleterious effects induced by the acceptors. A superlinear bandgap vs temperature behavior is tentatively interpreted as a band-filling effect, which is reduced with added concentrations of acceptors.

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Carrier concentration and transport in Be-doped InAsSb for infrared sensing applications

Cited by 3 publications

References 25 publications

Locally‐Strain‐Induced Heavy‐Hole‐Band Splitting Observed in Mobility Spectrum of p‐Type InAs Grown on GaAs

Locally‐Strain‐Induced Heavy‐Hole‐Band Splitting Observed in Mobility Spectrum of p‐Type InAs Grown on GaAs

InAsSb-Based Infrared Photodetectors: Thirty Years Later On

P-doping with beryllium of long-wavelength InAsSb

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