In the present paper we determine the optical constants and thicknesses of multilayer thin film stacks, in the visible and near infrared ranges. These parameters are derived from the transmittance and reflectance spectra measured by a spectrophotometer, for several angles of incidence. Several examples are studied, from a simple single layer structure up to a 22-layer dielectric filter. We show that the use of a large number of incidence angles is an effective means of reducing the number of mathematical solutions and converging on the correct physical solution when the number of layers increases. More specifically, we provide an in-depth discussion of the approach used to extract the index and thickness of each layer, which is achieved by analysing the various mathematical solutions given by a global optimization procedure, based on as little as 6 and as many as 32 variable parameters. The results show that multiple incidences, lead to the true solution for a filter with a large number of layers. In the present study, a Clustering Global Optimization algorithm is used, and is shown to be efficient even for a high number of variable parameters. Our analysis allows the accuracy of the reverse engineering process to be estimated at approximately 1 nm for the thickness, and 2 10(-3) for the index of each layer in a 22-layer filter.

In this paper we use spectrophotometric measurements and a Clustering Global Optimization procedure to determine the complex refractive index of SiO 2 layer from 250 nm to 1250 nm. A special commercial optical module allows the reflection and transmission measurements to be made under exactly the same illumination and measurement conditions. We compare the index determination results obtained from two different single layer SiO 2 samples, with high and low index glass substrates, respectively. We then determine the refractive index of SiO 2 for a bi-layer design in which the first deposited layer is Ta 2 O 5 . The corresponding solutions are discussed and we show that the real part of the complex refractive index obtained for a bi-layer is slightly different to that found for a single layer investigation. When SiO 2 is included inside a thin film stack, we propose the use of an index determination method in which a bi-layer is used for the real part of the complex refractive index, and single layer determination is used for the imaginary part of the refractive index in the UV range.

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A laser damage test facility delivering pulses from 100 fs to 3 ps and designed to operate at 1030 nm is presented. The different details of its implementation and performances are given. The originality of this system relies the online damage detection system based on Nomarski microscopy and the use of a non-conventional energy detection method based on the utilization of a cooled CCD that offers the possibility to obtain the laser induced damage threshold (LIDT) with high accuracy. Applications of this instrument to study thin films under laser irradiation are presented. Particularly the deterministic behavior of the sub-picosecond damage is investigated in the case of fused silica and oxide films. It is demonstrated that the transition of 0-1 damage probability is very sharp and the LIDT is perfectly deterministic at few hundreds of femtoseconds. The damage process in dielectric materials being the results of electronic processes, specific information such as the material bandgap is needed for the interpretation of results and applications of scaling laws. A review of the different approaches for the estimation of the absorption gap of optical dielectric coatings is conducted and the results given by the different methods are compared and discussed. The LIDT and gap of several oxide materials are then measured with the presented instrument: Al(2)O(3), Nb(2)O(5), HfO(2), SiO(2), Ta(2)O(5), and ZrO(2). The obtained relation between the LIDT and gap at 1030 nm confirms the linear evolution of the threshold with the bandgap that exists at 800 nm, and our work expands the number of tested materials.