We report the synthesis and systematic investigation of nine different indigo derivatives as promising materials for sustainable organic electronics. It has been shown that chemical design allows one to tune optoelectronic properties of indigoids as well as their semiconductor performance in OFETs. Fundamental correlations between the molecular structures of indigo derivatives, structural characteristics of their films, charge carrier transport properties and transistor characteristics have been revealed. Particularly important was lowering the LUMO energy levels of indigoids bearing strong electron withdrawing groups which improved dramatically ambient stability of n-type OFETs. Chemical structures of novel indigoids enabling truly air-stable n-channel OFET operation were proposed.

Here we report a systematic investigation of indigo thin films grown on different dielectric underlayers. It has been revealed that aliphatic hydrocarbon chains serve as templates inducing the formation of a new crystal modification of indigo which possesses advanced charge transport properties and affords a dramatic improvement in the electrical performance of organic field-effect transistors.

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Synthesis and systematic investigation of dibenzoindigo, a derivative of the natural colorant indigo with an extended π‐electron conjugated system, is presented. This material shows comparable hole mobilities in organic field‐effect transistors (OFETs) with the benchmark semiconductors such as pentacene and dinaphthothienothiophene. Relatively easy synthesis of dibenzoindigo, low toxicity, and excellent ambient stability in OFETs makes it promising material for designing sustainable and biocompatible organic electronics. Air‐stable operation of optical memory elements has been demonstrated using dibenzonindigo as semiconductor and spirooxazine‐type photochromic material as a light sensitive component.

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