5,5'-Diiodoindigo (4) exhibits excellent ambipolar transistor properties with the hole/electron mobilities of µ h /µ e = 0.42/0.85 cm 2 V −1 s −1 .The halogen substituted indigos show systematically decreasing energy gaps from F to I due to the spreading highest occupied molecular orbitals, and decreasing tilt angles in the crystals. In addition, the iodine-iodine interaction provides extraordinarily large interchain interaction.However, the X-ray diffraction suggests that the indigo molecules are arranged approximately perpendicular to the substrate in the thin films, probably due to the extra iodine-iodine interaction. The remarkable performance is ascribed to this characteristic supramolecular interaction. Scheme 1. Synthesis of indigo derivatives. Fig. 4. Crystal structures of 1-4 viewed along the (a) c and (b) b axes. (c) Schematic illustration of the stacking structure. Halogen-halogen contacts of (d) 3 and (e) 4. The distances are 3.611 Å and 3.875 Å, respectively.