Poly(vinylidene fluoride), PVDF, as one of important polymeric materials with extensively scientific interests and technological applications, shows five crystalline polymorphs with α, β, γ, δ and ε phases obtained by different processing methods. Among them, β phase PVDF presents outstanding electrical characteristics including piezo-, pyro-and ferroelectric properties. These electroactive properties are increasingly important in applications such as energy storage, spin valve devices, biomedicine, sensors and smart scaffolds. This article discusses the basic knowledge and character methods for PVDF fabrication and provides an overview of recent advances on the phase modification and recent applications of the β phase PVDF are reported. This study may provide an insight for the development and utilization for β phase PVDF nanofilms in future electronics.

We present a facile method for fabricating spongelike Au structures by halide-induced aggregation and fusion of gold nanoparticles (AuNPs). Halide ions (F(-), Cl(-), Br(-), and I(-)) showed distinctly different effects on the synthesized AuNPs, which were characterized by localized surface plasmon resonance (LSPR) and dynamic light scattering measurements. A noticeable red-shift in the LSPR peak was found after Br(-) and I(-) ion treatment, which indicates the adsorption of halide atoms or ions on the AuNPs. The surface potential of AuNPs varied by treatment with different types of halides; this finding indicates that different halide ions have different effects on the AuNPs. Br(-) and I(-) ions showed strong affinity toward the AuNPs. The different affinities of halide ions toward the AuNPs play an important role in controlling the formation process of spongelike gold. Citrate ions adsorbed on AuNPs were displaced by halide ions to different extents. Such displacement determined the aggregation and fusion behaviors of the AuNPs and eventually the formation of different spongelike structures.

The Schottky barrier has been detected in many field-effect transistors (FETs) based on transition metal dichalcogenide (TMD) semiconductors and has seriously affected the electronic properties of the devices. In order to decrease the Schottky barrier in WS2 FETs, novel Nb doping in WS2 monolayers has been performed and p-FETs based on Nb-doped WS2 (Nb(x)W(1-x)S2) monolayers as the active channel have been fabricated for the first time. The monolayer Nb0.15W0.85S2 p-FET has a drain current of 330 μA μm(-1), an impressive I(ON)/I(OFF) of 10(7), and a high effective hole mobility of ∼146 cm(2) V(-1) s(-1). The novel Nb doping in monolayer WS2 has eliminated the ambipolar behavior and reduced the Schottky barrier in WS2 FETs. The reduction of the Schottky barrier is ascribed to the hybridization between W 5d, Nb 4d and S 3p states near the EF and to the enhancement of the metallization of the contact between the Pd metal and monolayer Nb(x)W(1-x)S2 after Nb doping.

This paper reports the preparation and properties of color-switchable fluorescent carbon nanodots (C-dots). C-dots that emit dark turquoise and green-yellow fluorescence under 365 nm UV illumination were obtained from the hydrothermal decomposition of citric acid. Dark green fluorescent C-dots were obtained by conjugating prepared C-dots to form C-dot@C-dot nanoparticles. After successful conjugation of the C-dots, the fluorescence emission undergoes a blue-shift of nearly 20 nm (∼0.15 eV) under UV excitation at 370 nm. The C-dots emit goldenrod, green-yellow, and gold light under excitation at 455 nm, which shows that the prepared C-dots are color-switchable. Furthermore, conjugation of the C-dots results in enhanced, red-shifted absorption of the π-π* transition of the aromatic sp(2) domains due to the conjugated π-electron system. N incorporation in the carbon structure leads to a degree of dipoles for all the aromatic sp(2) bonds. The enhanced absorption in a wide range from 226 to 601 nm indicates extended conjugation in the C-dot@C-dot structure. The time-resolved average lifetimes for the three different types of C-dots prepared in this study are 7.10, 7.65, and 4.07 ns. The radiative rate (reduced decay lifetime) increases when the C-dots are conjugated in the C-dot@C-dot nanoparticles, leading to the enhanced fluorescence emission. The fluorescence emission of the C-dot@C-dot nanoparticles can be used in applications such as flow cytometry and cell imaging.

Room temperature magnetoresistance devices using ferroelectric poly(vinylidene fluoride) as the spacer layer were successfully fabricated for the first time.

Semiconductor-based photodetectors (PDs) convert light signals into electrical signals via a photon–matter interaction process, which involves surface/interface carrier generation, separation, and transportation of the photo-induced charge media in the active media, as well as the extraction of these charge carriers to external circuits of the constructed nanostructured photodetector devices. Because of the specific electronic and optoelectronic properties in the low-dimensional devices built with nanomaterial, surface/interface engineering is broadly studied with widespread research on constructing advanced devices with excellent performance. However, there still exist some challenges for the researchers to explore corresponding mechanisms in depth, and the detection sensitivity, response speed, spectral selectivity, signal-to-noise ratio, and stability are much more important factors to judge the performance of PDs. Hence, researchers have proposed several strategies, including modification of light absorption, design of novel PD heterostructures, construction of specific geometries, and adoption of specific electrode configurations to modulate the charge-carrier behaviors and improve the photoelectric performance of related PDs. Here, in this brief review, we would like to introduce and summarize the latest research on enhancing the photoelectric performance of PDs based on the designed structures by considering their surface/interface engineering and how to obtain advanced nanostructured photo-detectors with improved performance, which could be applied to design and fabricate novel low-dimensional PDs with ideal properties in the near future.

Unlike conventional bulk or film materials, one-dimensional (1D) semiconducting zinc oxide (ZnO) nanostructures exhibit excellent photoelectric properties including ultrahigh intrinsic photoelectric gain, multiple light confinement, and subwavelength size effects. Compared with polycrystalline thin films, nanowires usually have high phase purity, no grain boundaries, and long-distance order, making them attractive for carrier transport in advanced optoelectronic devices. The properties of one-dimensional nanowires-such as strong optical absorption, light emission, and photoconductive gain-could improve the performance of light-emitting diodes (LEDs), photodetectors, solar cells, nanogenerators, field-effect transistors, and sensors. For example, ZnO nanowires behave as carrier transport channels in photoelectric devices, decreasing the loss of the light-generated carrier. The performance of LEDs and photoelectric detectors based on nanowires can be improved compared with that of devices based on polycrystalline thin films. This article reviews the fabrication methods of 1D ZnO nanostructures-including chemical vapor deposition, hydrothermal reaction, and electrochemical deposition-and the influence of the growth parameters on the growth rate and morphology. Important applications of 1D ZnO nanostructures in optoelectronic devices are described. Several approaches to improve the performance of 1D ZnO-based devices, including surface passivation, localized surface plasmons, and the piezo-phototronic effect, are summarized.

A novel method of fabricating large-scale horizontally aligned ZnO microrod arrays with controlled orientation and periodic distribution via combing technology is introduced. Horizontally aligned ZnO microrod arrays with uniform orientation and periodic distribution can be realized based on the conventional bottom-up method prepared vertically aligned ZnO microrod matrix via the combing method. When the combing parameters are changed, the orientation of horizontally aligned ZnO microrod arrays can be adjusted (θ = 90° or 45°) in a plane and a misalignment angle of the microrods (0.3° to 2.3°) with low-growth density can be obtained. To explore the potential applications based on the vertically and horizontally aligned ZnO microrods on p-GaN layer, piezo-phototronic devices such as heterojunction LEDs are built. Electroluminescence (EL) emission patterns can be adjusted for the vertically and horizontally aligned ZnO microrods/p-GaN heterojunction LEDs by applying forward bias. Moreover, the emission color from UV-blue to yellow-green can be tuned by investigating the piezoelectric properties of the materials. The EL emission mechanisms of the LEDs are discussed in terms of band diagrams of the heterojunctions and carrier recombination processes.