We present a systematic procedure for designing "flat bands" of photonic crystal waveguides for slow light propagation. The procedure aims to maximize the group index - bandwidth product by changing the position of the first two rows of holes of W1 line defect photonic crystal waveguides. A nearly constant group index - bandwidth product is achieved for group indices of 30-90 and as an example, we experimentally demonstrate flat band slow light with nearly constant group indices of 32.5, 44 and 49 over 14 nm, 11 nm and 9.5 nm bandwidth around 1550 nm, respectively.

Slow light has attracted significant interest recently as a potential solution for optical delay lines and time-domain optical signal processing 1,2. Perhaps even more significant is the possibility of dramatically enhancing nonlinear optical effects 3,4 due to the spatial compression of optical energy 5,6,7. Two-dimensional (2D) silicon photonic crystal (PhC) waveguides have proven to be a powerful platform for realizing slow light, being compatible with on-chip integration and offering wide-bandwidth and dispersion-free propagation 2. Here, we report the slow light enhancement of a nonlinear optical process in a 2D silicon PhC waveguide. We observe visible third-harmonic generation (THG) at a wavelength of 520nm with only a few watts of peak power, and demonstrate strong THG enhancement due to the reduced group velocity of the near-infrared pump signal. This demonstrates yet another unexpected nonlinear function realized in a CMOS-compatible silicon waveguide. Main text Although silicon has been the material of choice for the CMOS industry and more recently for integrated photonics, its optical properties-e.g light emission-still provide major challenges. In addition to an indirect band-gap and inversion symmetry,

Slow light devices such as photonic crystal waveguides (PhCW) and coupled resonator optical waveguides (CROW) have much promise for optical signal processing applications and a number of successful demonstrations underpinning this promise have already been made. Most of these applications are limited by propagation losses, especially for higher group indices. These losses are caused by technological imperfections ("extrinsic loss") that cause scattering of light from the waveguide mode. The relationship between this loss and the group velocity is complex and until now has not been fully understood. Here, we present a comprehensive explanation of the extrinsic loss mechanisms in PhC waveguides and address some misconceptions surrounding loss and slow light that have arisen in recent years. We develop a theoretical model that accurately describes the loss spectra of PhC waveguides. One of the key insights of the model is that the entire hole contributes coherently to the scattering process, in contrast to previous models that added up the scattering from short sections incoherently. As a result, we have already realised waveguides with significantly lower losses than comparable photonic crystal waveguides as well as achieving propagation losses, in units of loss per unit time (dB/ns) that are even lower than those of state-of-the-art coupled resonator optical waveguides based on silicon photonic wires. The model will enable more advanced designs with further loss reduction within existing technological constraints.

We review the different types of dispersion engineered photonic crystal waveguides that have been developed for slow light applications. We introduce the group index bandwidth product (GBP) and the loss per delay in terms of dB ns − 1 as two key figures of merit to describe such structures and compare the different experimental realizations based on these figures. A key outcome of the comparison is that slow light based on photonic crystals performs as well or better than slow light based on coupled ring resonators.

We report the generation of correlated photon pairs in the telecom C-band at room temperature from a dispersion-engineered silicon photonic crystal waveguide. The spontaneous four-wave mixing process producing the photon pairs is enhanced by slow-light propagation enabling an active device length of less than 100 μm. With a coincidence to accidental ratio of 12.8 at a pair generation rate of 0.006 per pulse, this ultracompact photon pair source paves the way toward scalable quantum information processing realized on-chip.

Abstract:We experimentally investigate the slow light enhancement of nonlinear effects such as self-phase modulation, two-photon absorption and free carriers, through dispersion-engineered silicon photonic crystal waveguides. We also observe emission of visible light through thirdharmonic generation.

We present the first demonstration of frequency conversion by simultaneous second- and third-harmonic generation in a silicon photonic crystal nanocavity using continuous-wave optical excitation. We observe a bright dual wavelength emission in the blue/green (450-525 nm) and red (675-790 nm) visible windows with pump powers as low as few microwatts in the telecom bands, with conversion efficiencies of ∼ 10 (-5) /W and ∼ 10/ W(2) for the second- and third-harmonic, respectively. Scaling behaviors as a function of pump power and cavity quality-factor are demonstrated for both second- and third order processes. Successful comparison of measured and calculated emission patterns indicates that third-harmonic is a bulk effect while second-harmonic is a surface-related effect at the sidewall holes boundaries. Our results are promising for obtaining practical low-power, continuous-wave and widely tunable multiple harmonic generation on a silicon chip.

We examine the effects of disorder on propagation loss as a function of group velocity for W1 photonic crystal (PhC) waveguides. Disorder is deliberately and controllably introduced into the photonic crystal by pseudo-randomly displacing the holes of the photonic lattice. This allows us to clearly distinguish two types of loss. Away from the band-edge and for moderately slow light (group velocity c/20-c/30) loss scales sub-linearly with group velocity, whereas near the band-edge, reflection loss increases dramatically due to the random and local shift of the band-edge. The optical analysis also shows that the random fabrication errors of our structures, made on a standard e-beam lithography system, are below 1 nm root mean square.