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There is increasing research interest in assemblies of chemically synthesized nanocrystal quantum dots since the self-assembly capabilities of this class of materials offer the promise of "artificial atom" solids with unique optical, electronic, and magnetic properties. [1][2][3][4][5][6][7][8][9][10][11][12][13] From a scientific viewpoint, these systems may serve as models for understanding fundamental solid-state physical phenomena at reduced energy scales (and increased length scales) compared to conventional solids. For example, effects that result from tuning of the inter-nanocrystal separation include demonstrations of insulator-to-metal transitions in compressed two-dimensional (2D) Langmuir-Blodgett monolayers of silver nanocrystals at room temperature. [14] Manipulation of inter-nanocrystal coupling from insulating to metallic states has also been

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Arrays of 28 kDa nanocrystal gold molecules behave as weakly-coupled molecular solids comprising discrete nanoscale metallic islands separated by insulating ligand barriers. The key parameters which are found to dominate charge transport are (a) the single-electron nanocrystal charging energy, governed by the core diameter, the dielectric properties of the passivating ligands and classical electrostatic coupling between neighbouring cores; (b) the inter-nanocrystal tunnel barrier resistance that arises from the insulating nature of the ligand bilayers that separate the cores; and (c) the dimensionality of the network of current-carrying paths.

Conjugated polymer based 1D nanostructures are attractive building blocks for future opto-electronic nanoscale devices and systems. However, a critical challenge remains the lack of manipulation methods that enable controlled and reliable positioning and orientation of organic nanostructures in a fast, reliable and scalable manner. To address this challenge, we explore dielectrophoretic assembly of discrete poly(9,9-dioctylfluorene) nanofibres and demonstrate site selective assembly and orientation of these fibres. Nanofibre arrays were assembled preferentially at receptor electrode edges, being aligned parallel to the applied electric field with a high order parameter fit (∼ 0.9) and exhibiting an emission dichroic ratio of ∼ 4.0. As such, the dielectrophoretic method represents a fast, reliable and scalable self-assembly approach for manipulation of 1D organic nanostructures. The ability to fabricate nanofibre arrays in this manner could be potentially important for exploration and development of future nanoscale opto-electronic devices and systems.

We report on charge transport measurements through laterally contacted assemblies of Au nanoparticles capped with 11-mercaptoundecanoic acid ligands. Both alternating- and direct-current data indicate that although the nanoparticles behave as electrically isolated metallic islands, there is a significant influence from the nanoparticle environment, indicating the existence of a slow reorganization process linked to charge transport. On the basis of the observation of temperature-dependent hysteresis of charge tunneling, we propose that this process is due to proton transfer between the carboxylic acid tails of the ligands.

Experimental observations for the In 0.53 Ga 0.47 As metal-oxide-semiconductor (MOS) system in inversion indicate that the measured capacitance (C) and conductance (G or G m ), are uniquely related through two functions of the alternating current angular frequency (ω). The peak value of the first function (G/ω) is equal to the peak value of the second function (−dC/dlog e (ω) ≡ −ωdC/dω). Moreover, these peak values occur at the same angular frequency (ω m ), that is, the transition frequency. The experimental observations are confirmed by physics-based simulations, and applying the equivalent circuit model for the MOS system in inversion, the functional relationship is also demonstrated mathematically and shown to be generally true for any MOS system in inversion. The functional relationship permits the discrimination between high interface state densities and genuine surface inversion. The two function peak values are found to be equal to C 2 ox /(2(C ox + C D )) where C ox is the oxide capacitance per unit area and C D is the semiconductor depletion capacitance in inversion. The equal peak values of the functions, and their observed symmetry relation about ω m on a logarithmic ω plot, opens a new route to experimentally determining C ox . Finally, knowing ω m permits the extraction of the minority carrier generation lifetime in the bulk of the In 0.53 Ga 0.47 As layer. IndexTerms-Al 2 O 3 , capacitance, conductance, III-V, In 0.53 Ga 0.47 As, interface state defects, inversion, metal-oxide-semiconductor (MOS) system, minority carrier generation lifetime, oxide capacitance, semiconductor quality.

Original citationMcGibney, E.; Barton, J.; Floyd, L.; Tassie