Using data from the 2000 and 2010 Chinese Population Censuses and applying a consistent definition of migration, this paper examines changing patterns of China's floating population during 2000-2010. We find that during the first decade of the 21st century, there have been significant changes in China's floating population, as reflected in continuing rise of interprovincial floating population and the rise of the floating population in China's western and interior regions, geographic diversification of destinations for the floating population, a major increase in interprovincial return migration, and significant improvement in education and occupational profiles among the floating population. We argue that these patterns are driven by a combination of complex domestic and international factors, including the newly released Labor Law, removal of agricultural tax, the western China development program, increased investment in education by the Chinese government, and the global financial crisis. We also discuss several challenges facing the floating population in the coming years, which include equality of educational opportunity for migrant children and adequate housing and social welfare protection for the floating population. Finally, we reflect on the future of migration research in China.

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Photonic detection with narrow spectrum selectivity is very important to eliminate the signal from obtrusive light, which can improve the anti-interference ability of the infrared imaging system. While the self-driving effect inherent to the p−n junction is very attractive in optic-electronic integration, the application of the p−n junction in narrow-band photodetectors is limited by the usual broad absorption range. In this work, a self-powered filterless narrowband near-infrared photodetector based on CuGaTe 2 /silicon p−n junction was reported. The as-fabricated photodetector exhibited typical narrow-band response which shall be ascribed to the slightly smaller band gap of Si than CuGaTe 2 and the restricted photocurrent generation region in the p−n heterojunction by optimizing CuGaTe 2 thickness. It is observed that when the thickness of CuGaTe 2 film is 143 nm, the device exhibits a response peak centered around 1050 nm with a full-width at half-maximum of ∼118 nm. Further device analysis reveals a specific detectivity of ∼10 12 Jones and a responsivity of 114 mA/W under 1064 nm illumination at zero bias. It was also found that an image system based on the narrowband CuGaTe 2 /Si photodetector showed high noise immunity for its spectral selective characteristics.

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